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PDF FDZ372NZ Data sheet ( Hoja de datos )
| Número de pieza | FDZ372NZ | |
| Descripción | N-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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March 2010
FDZ372NZ
N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
20 V, 4.7 A, 50 mΩ
Features
General Description
Max rDS(on) = 50 mΩ at VGS = 4.5 V, ID = 2 A
Max rDS(on) = 60 mΩ at VGS = 2.5 V, ID = 2 A
Max rDS(on) = 72 mΩ at VGS = 1.8 V, ID = 1 A
Max rDS(on) = 93 mΩ at VGS = 1.5 V, ID = 1 A
Occupies only 1.0 mm2 of PCB area. Less than 30% of the
area of 2x2 BGA
Ultra-thin package: less than 0.4 mm height when mounted
to PCB
HBM ESD protection level > 3200V (Note3)
RoHS Compliant
Designed on Fairchild's advanced 1.5 V PowerTrench® process
with state of the art "fine pitch" Thin WLCSP packaging process,
the FDZ372NZ minimizes both PCB space and rDS(on). This
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low rDS(on).
Applications
Battery management
Load switch
Battery protection
Pin 1
S
DS
G
Pin 1
BOTTOM
WL-CSP 1.0X1.0 Thin
TOP
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±8
4.7
12
1.7
0.5
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
L
Device
FDZ372NZ
Package
WL-CSP 1.0x1.0 Thin
(Note 1a)
(Note 1b)
75
260
Reel Size
7 ’’
Tape Width
8 mm
°C/W
Quantity
5000 units
©2010 Fairchild Semiconductor Corporation
FDZ372NZ Rev.C2
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
10-4
10-3
PDM
SINGLE PULSE
RθJA = 260 oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
10
100
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
1000
©2010 Fairchild Semiconductor Corporation
FDZ372NZ Rev.C2
5
www.fairchildsemi.com
5 Page | ||
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| PDF Descargar | [ Datasheet FDZ372NZ.PDF ] | |
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