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PDF IRF6893MTRPbF Data sheet ( Hoja de datos )
| Número de pieza | IRF6893MTRPbF | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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PD - 97761
IRF6893MPbF
IRF6893MTRPbF
DirectFET®plus MOSFET with Schottky Diode
l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified)
l Integrated Monolithic Schottky Diode
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Low Package Inductance
l Optimized for High Frequency Switching
VDSS
VGS
RDS(on)
RDS(on)
25V max ±16V max 1.2m@ 10V 1.6m@ 4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
25nC 8.5nC 2.5nC 36nC 29nC 1.6V
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
l Footprint compatible to DirectFET™
MX
ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MP
Description
The IRF6893MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6893MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters
that power high current loads such as the latest generation of microprocessors. The IRF6893MPbF has been optimized for parameters that
are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
25 V
±16
29
23 A
168
230
370 mJ
23 A
5
ID = 29A
4
3
TJ = 125°C
2
1 TJ = 25°C
0
0 2 4 6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
14.0
12.0
ID= 23A
10.0
8.0
VDS= 20V
VDS= 13V
VDS= 5.0V
6.0
4.0
2.0
0.0
0
10 20 30 40 50 60 70
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.4mH, RG = 50, IAS = 23A.
1
02/22/12
1 page  
1000
100
1000
100
IRF6893MTRPbF
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1msec 100μsec
10 TJ = 150°C
TJ = 25°C
TJ = -40°C
1
VGS = 0V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
10
10msec
1 DC
0.1 Tc = 25°C
Tj = 150°C
Single Pulse
0.01
0.01
0.1
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 11. Maximum Safe Operating Area
200
150
100
50
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
1600
1400
1200
1000
2.3
2.2
2.1
2.0
1.9
ID = 10mA
1.8
1.7
1.6
1.5
1.4
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP 1.5A
2.2A
BOTTOM 23A
800
600
400
200
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
www.irf.com
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF6893MTRPbF.PDF ] | |
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