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M29W160FBのメーカーはNumonyxです、この部品の機能は「3V supply Flash memory」です。 |
部品番号 | M29W160FB |
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部品説明 | 3V supply Flash memory | ||
メーカ | Numonyx | ||
ロゴ | |||
このページの下部にプレビューとM29W160FBダウンロード(pdfファイル)リンクがあります。 Total 30 pages
M29W160FT M29W160FB
M29W320FT M29W320FB
16 Mbit or 32 Mbit (x 8 or x 16, boot block)
3 V supply Flash memory
Features
Supply voltage
– VCC = 2.5 V to 3.6 V (access time: 80 ns) or
2.7 to 3.6 V (access time: 70 ns) for
Program, Erase and Read
– VPP = 12 V for Fast Program (optional,
available in the M29W320FT/B only)
Access time: 70, 80 ns
Programming time
– 10 μs per byte/word typical
Memory organization:
– M29W160FT/B: 35 blocks including 1 boot
block (top or bottom location), 2 parameter
blocks and 32 main blocks
– M29W320FT: 67 blocks including 1 boot
block (top or bottom location), 2 parameter
blocks and 64 main blocks
Program/Erase controller
– Embedded byte/word program algorithms
Erase Suspend and Resume modes
– Read and Program another block during
Erase Suspend
Unlock Bypass Program command
– Faster production/batch programming
VPP/WP pin for Fast program and Write Protect
(available in the M29W320FT/B only)
Temporary block unprotection mode
Common Flash interface
– 64 bit security code
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per block
TSOP48 (N)
12 x 20 mm
FBGA
TFBGA48 (ZA)
6 x 8 mm
Electronic signature
– Manufacturer code: 0020h
– Top device codes
M29W160FT: 22C4h
M29W320FT: 22CAh
– Bottom device codes
M29W160FB: 2249h
M29W320FB: 22CBh
Automotive device grade 3:
– Temperature: –40 to 125 °C
– Automotive grade certified
TSOP48 package is RoHS compliant
November 2008
208011-04
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www.numonyx.com
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1 Page M29W160FT, M29W160FB, M29W320FT, M29W320FB
Contents
4.5 Unlock Bypass Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4.6 Unlock Bypass Reset command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4.7 Chip Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.8 Block Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.9 Erase Suspend command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.10 Erase Resume command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.11 Read CFI Query command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
5 Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
5.1 Data Polling bit (DQ7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
5.2 Toggle bit (DQ6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
5.3 Error bit (DQ5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
5.4 Erase Timer bit (DQ3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
5.5 Alternative Toggle bit (DQ2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
6 Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
7 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
8 Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
9 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Appendix A Block address table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Appendix B Common Flash interface (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Appendix C Block protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
9.1 Programmer technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
9.2 In-system technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
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3Pages Description
1 Description
M29W160FT, M29W160FB, M29W320FT, M29W320FB
The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit
(4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and
reprogrammed. These operations can be performed using a single low voltage supply (2.5
to 3.6 V or 2.7 to 3.6 V for access time of 80 ns and 70 ns, respectively). On power-up the
memory defaults to its Read mode where it can be read in the same way as a ROM or
EPROM.
The memory is divided into blocks that can be erased independently so it is possible to
preserve valid data while old data is erased. Each block can be protected independently to
prevent accidental Program or Erase commands from modifying the memory. Program and
Erase commands are written to the command interface of the memory. An on-chip
Program/Erase controller simplifies the process of programming or erasing the memory by
taking care of all of the special operations that are required to update the memory contents.
The end of a program or erase operation can be detected and any error conditions
identified. The command set required to control the memory is consistent with JEDEC
standards.
The blocks in the memory are asymmetrically arranged, see Figures 4, 5, 6 and 7, Block
addresses. The first or last 64 Kbytes have been divided into four additional blocks. The
16 Kbyte Boot Block can be used for small initialization code to start the microprocessor, the
two 8 Kbyte Parameter Blocks can be used for parameter storage and the remaining
32 Kbyte block is a small Main Block where the application may be stored.
Chip Enable, Output Enable and Write Enable signals control the bus operation of the
memory. They allow simple connection to most microprocessors, often without additional
logic.
The memory is offered in TSOP48 (12 x 20 mm) and TFBGA48 (0.8 mm pitch) packages.
The memory is supplied with all the bits erased (set to ’1’).
In order to meet environmental requirements, Numonyx offers these devices in
RoHS compliant packages. These packages have a Lead-free second-level interconnect.
The category of second level interconnect is marked on the package and on the inner box
label, in compliance with JEDEC Standard JESD97.
The maximum ratings related to soldering conditions are also marked on the inner box label.
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ページ | 合計 : 30 ページ | ||
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部品番号 | 部品説明 | メーカ |
M29W160FB | 3V supply Flash memory | Numonyx |
M29W160FT | 3V supply Flash memory | Numonyx |