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M29W400DTのメーカーはNumonyxです、この部品の機能は「3V supply Flash memory」です。 |
部品番号 | M29W400DT |
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部品説明 | 3V supply Flash memory | ||
メーカ | Numonyx | ||
ロゴ | |||
このページの下部にプレビューとM29W400DTダウンロード(pdfファイル)リンクがあります。 Total 30 pages
M29W400DT
M29W400DB
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block)
3 V supply Flash memory
Features
Supply voltage
– VCC = 2.7 V to 3.6 V for Program, Erase
and Read
Access time: 45, 55, 70 ns
Programming time
– 10 μs per byte/word typical
11 memory blocks
– 1 boot block (top or bottom location)
– 2 parameter and 8 main blocks
Program/Erase controller
– Embedded byte/word program algorithms
Erase Suspend and Resume modes
– Read and Program another block during
Erase Suspend
Unlock bypass program command
– Faster production/batch programming
Temporary block unprotection mode
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per block
Electronic signature
– Manufacturer code: 0020h
– Top device code M29W400DT: 00EEh
– Bottom device code M29W400DB: 00EFh
– RoHS packages
Automotive Device Grade 3
– Temperature: –40 to 125 °C
– Automotive grade certified
SO44 (M)(1)
TSOP48 (N)
12 x 20 mm
FBGA
TFBGA48 (ZA)(1)
6 x 9 mm
FBGA
TFBGA48 (ZE)
6 x 8 mm
1. These packages are no more in mass production.
April 2009
Rev 8
1/48
www.numonyx.com
1
1 Page M29W400DT, M29W400DB
Contents
4.6
4.7
4.8
4.9
4.10
4.11
Unlock Bypass Reset command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Chip Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Block Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Erase Suspend command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Erase Resume command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Block Protect and Chip Unprotect commands . . . . . . . . . . . . . . . . . . . . . 22
5 Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
5.1 Data Polling bit (DQ7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
5.2 Toggle bit (DQ6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
5.3 Error bit (DQ5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
5.4 Erase Timer bit (DQ3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
5.5 Alternative Toggle bit (DQ2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
6 Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
7 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
8 Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
9 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Appendix A Block address table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Appendix B Block protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
B.1 Programmer technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
B.2 In-system technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
3/48
3Pages Description
1 Description
M29W400DT, M29W400DB
The M29W400D is a 4 Mbit (512 K x 8 or 256 K x 16) non-volatile memory that can be read,
erased and reprogrammed. These operations can be performed using a single low voltage
(2.7 to 3.6 V) supply. On power-up the memory defaults to its Read mode where it can be
read in the same way as a ROM or EPROM.
The memory is divided into blocks that can be erased independently so it is possible to
preserve valid data while old data is erased. Each block can be protected independently to
prevent accidental Program or Erase commands from modifying the memory. Program and
Erase commands are written to the command interface of the memory. An on-chip
Program/Erase controller simplifies the process of programming or erasing the memory by
taking care of all of the special operations that are required to update the memory contents.
The end of a program or erase operation can be detected and any error conditions
identified. The command set required to control the memory is consistent with JEDEC
standards.
The blocks in the memory are asymmetrically arranged, see Figure 5 and Figure 6, Block
addresses. The first or last 64 Kbytes have been divided into four additional blocks. The
16 Kbyte boot block can be used for small initialization code to start the microprocessor, the
two 8 Kbyte parameter blocks can be used for parameter storage and the remaining
32 Kbyte is a small main block where the application may be stored.
Chip Enable, Output Enable and Write Enable signals control the bus operation of the
memory. They allow simple connection to most microprocessors, often without additional
logic.
The memory is offered in SO44, TSOP48 (12 x 20 mm), TFBGA48 0.8 mm pitch (6 x 9 mm
and 6 x 8 mm) packages. The memory is supplied with all the bits erased (set to ’1’).
In order to meet environmental requirements, Numonyx offers the M29W400D in RoHS
packages, which are Lead-free. The category of second level interconnect is marked on the
package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label.
6/48
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ページ | 合計 : 30 ページ | ||
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
M29W400DB | 4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory | ST Microelectronics |
M29W400DB | 3V supply Flash memory | Numonyx |
M29W400DT | 4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory | ST Microelectronics |
M29W400DT | 3V supply Flash memory | Numonyx |