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PDF HT1818-15M Data sheet ( Hoja de datos )
| Número de pieza | HT1818-15M | |
| Descripción | GaN Hybrid Power Amplifier | |
| Fabricantes | RFHIC | |
| Logotipo |  |
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Preliminary
GaN Hybrid Power Amplifier HT1818-15M
Product Features
• E-pHEMT GaAs + GaN on SiC
• 2-Stage Amplifier 50ohms Matching
• Surface Mount Hybrid Type
• Small Size & Mass
• High Efficiency
Applications
• RF Sub-Systems
• Base Station
• Repeater
• 4G/LTE system
• Small cell
Package Type : NP-1EL
Description
The HT1818-15M is designed for LTE Repeater & RF Sub-systems application frequencies from 1805 to 1880MHz
This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance,
High power density.
Electrical Specifications @ Vds1 =5V, Vds2 =28V, Ta=25℃
PARAMETER
UNIT
MIN
TYP
MAX
Frequency Range
MHz
1805
-
1880
Power Gain
- 34 -
Gain Flatness
dB -
0.8 1.5
Input Return Loss
- -9 -6
Pout @ Average dBm - 33 -
Pout @ Psat
dBm 40.5
41.5
-
ACLR @ BW 10MHz
LTE (PAPR 7.5dB)
dBc
-
-
-39 -30
-54 -
Drain Efficiency
%
-
27
-
Ids1 - 140 -
mA
Ids2 - 240 -
-5-
Supply Voltage V -
-3.0 -2.0
- 28 -
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate Voltage supply and last turn on the Drain voltage supplies
Turn off : Turn off the Drain Voltage and last turn off the Gate voltage
Note
1. ACLR Measured Pout=33dBm @ fc± 10MHz / 9.015MHz
LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF, (DPD Engine: Optichron OP6180)
2. HT Series have internal DC blocking capacitors at the RF input and output ports
CONDITION
ZS = ZL = 50 ohm
Amp1 : Idq1 = 140mA
Amp2 : Idq2 = 105mA
Pulse Width=20us, Duty10%
Non DPD
With DPD
Pout @ Average
Drive Amp. (Vds1)
Gate Bias (Vgs2)
Main Bias (Vds2)
Mechanical Specifications
PARAMETER
Mass
Dimension
UNIT
g
㎜
Korean Facilities : 82-31-250-5078 / [email protected]
US Facilities : 919-677-8780 / [email protected]
TYP
2
20.5 x 15 x 3.5
1/8
REMARK
-
-
All specifications may change without notice
Version 0.1
1 page  
Preliminary
GaN Hybrid Power Amplifier HT1818-15M
Performance Charts
* Bias condition @ Idq1= 140mA, Idq2= 105mA, Ta=25℃
Power Gain vs. Output Power
38
36
34
32
1.80GHz
30 1.84GHz
1.88GHz
28
30 31 32 33 34 35
Output Power[dBm]
ACLR vs. Output Power
-25
-30
-35
-40
-45
-50
30
1.80GHz
1.84GHz
1.88GHz
31 32 33 34
Output Power[dBm]
35
*LTE 10MHz (PAPR=7.5dB) w/o DPD
40
35
30
25
20
15
30
350
300
250
200
150
100
50
0
30
Efficiency vs. Output Power
1.80GHz
1.84GHz
1.88GHz
31 32 33 34
Output Power[dBm]
35
Ids1 vs. Ids2 vs. Output Power
31 32 33 34
Output Power[dBm]
35
Korean Facilities : 82-31-250-5078 / [email protected]
US Facilities : 919-677-8780 / [email protected]
5/8
All specifications may change without notice
Version 0.1
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HT1818-15M.PDF ] | |
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