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PHD77NQ03T の電気的特性と機能

PHD77NQ03TのメーカーはNXP Semiconductorsです、この部品の機能は「N-channel TrenchMOS FET」です。


製品の詳細 ( Datasheet PDF )

部品番号 PHD77NQ03T
部品説明 N-channel TrenchMOS FET
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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PHD77NQ03T Datasheet, PHD77NQ03T PDF,ピン配置, 機能
PHD/PHU77NQ03T
N-channel TrenchMOS FET
Rev. 01 — 28 November 2006
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
I Fast switching
I Low thermal resistance
1.3 Applications
I DC-to-DC converters
I Computer motherboard
1.4 Quick reference data
I VDS 25 V
I RDSon 9.5 m
I ID 75 A
I QGD = 3.2 nC (typ)
2. Pinning information
Table 1. Pinning
Pin Description
1 gate (G)
2 drain (D)
3 source (S)
mb mounting base; connected to
drain (D)
Simplified outline
[1]
mb
2
13
SOT428 (DPAK)
[1] It is not possible to make a connection to pin 2 of the SOT428 package.
Symbol
mb
D
123
SOT533 (IPAK)
G
mbb076 S

1 Page





PHD77NQ03T pdf, ピン配列
NXP Semiconductors
PHD/PHU77NQ03T
N-channel TrenchMOS FET
120
Pder
(%)
80
03aa16
120
Ider
(%)
80
003aab282
40 40
0
0 50 100 150 200
Tmb (°C)
Pder = P----t--o--P-t-(--t2-o--5-t-°---C---) × 100 %
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
103
ID
(A)
102
Limit RDSon = VDS / ID
DC
10
0
0 50 100 150 200
Tmb (°C)
Ider = -I--D----(-I-2-D-5---°--C---) × 100 %
Fig 2. Normalized continuous drain current as a
function of mounting base temperature
003aab283
tp = 10 µ s
100 µs
1 ms
1
1 10 102
VDS (V)
Tmb = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PHD_PHU77NQ03T_1
Product data sheet
Rev. 01 — 28 November 2006
© NXP B.V. 2006. All rights reserved.
3 of 13


3Pages


PHD77NQ03T 電子部品, 半導体
NXP Semiconductors
PHD/PHU77NQ03T
N-channel TrenchMOS FET
80
ID
(A)
60
40
VGS (V) = 10
003aab285
87
6
5.6
5.2
20
RDSon
(m)
15
10
VGS (V) = 5.2
5.6
003aab286
6
7
8
10
20
0
0
4.8
4.4
4
3.8
0.2 0.4 0.6 0.8
1
VDS (V)
5
0
0 20 40 60 80
ID (A)
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Tj = 25 °C
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
80
ID
(A)
60
003aab287
2
a
1.5
03af18
40 1
20
Tj = 150 °C 25 °C
0.5
0
02468
VGS (V)
Tj = 25 °C and 175 °C; VDS > ID × RDSon
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
-60 0 60 120 180
Tj (°C)
a = -R---D----RS---o-D--n--S(--2o--5-n--°--C----)
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
PHD_PHU77NQ03T_1
Product data sheet
Rev. 01 — 28 November 2006
© NXP B.V. 2006. All rights reserved.
6 of 13

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
PHD77NQ03T

N-channel TrenchMOS FET

NXP Semiconductors
NXP Semiconductors


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