(PDF) BSS138-7-F Datasheet - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Número de pieza	BSS138-7-F
Descripción	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Fabricantes	Multicomp
Logotipo
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No Preview Available ! N-Channel Logic Level Enhancement Mode Field Effect Transistor Features: • Low On-Resisrance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input / Output Leakage Applications: • N-channel Enhancement Mode Effect Transistor • Switching Application Maximum Ratings: Ratings at 25°C unless otherwise specified. Parameter Drain-source voltage Drain-gate voltage RGS ≤20kΩ Gate-source voltage Drain current -continuous Power dissipation Thermal resistance, junction-to-ambient Junction and storage temperature Symbol VDSS VGGR VGSS ID PD RθJA TJ, Tstg Value 50 50 ±20 200 300 417 -55 to +150 www.element14.com www.farnell.com www.newark.com Page <1> SOT-23 Units V V V mA mW °C/W °C 27/02/13 V1.0 1 page

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PDF BSS138-7-F Data sheet ( Hoja de datos )