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BAW56S の電気的特性と機能

BAW56SのメーカーはNXP Semiconductorsです、この部品の機能は「High-speed switching diodes」です。


製品の詳細 ( Datasheet PDF )

部品番号 BAW56S
部品説明 High-speed switching diodes
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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BAW56S Datasheet, BAW56S PDF,ピン配置, 機能
BAV756S; BAW56 series
High-speed switching diodes
Rev. 6 — 18 March 2015
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1. Product overview
Type number Package
NXP
JEITA
BAV756S
SOT363 SC-88
BAW56
BAW56M
SOT23
SOT883
-
SC-101
BAW56S
SOT363 SC-88
BAW56T
BAW56W
SOT416
SOT323
SC-75
SC-70
JEDEC
-
Package
configuration
very small
TO-236AB small
- leadless ultra
small
- very small
- ultra small
- very small
Configuration
quadruple common
anode/common cathode
dual common anode
dual common anode
quadruple common
anode/common anode
dual common anode
dual common anode
1.2 Features and benefits
High switching speed: trr 4 ns
Low leakage current
Small SMD plastic packages
Low capacitance: Cd 2 pF
Reverse voltage: VR 90 V
AEC-Q101 qualified
1.3 Applications
High-speed switching
General-purpose switching
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per diode
IR reverse current
VR reverse voltage
trr reverse recovery time
Conditions
Min Typ
VR = 80 V
-
-
[1] -
-
-
-
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
Max
0.5
90
4
Unit
A
V
ns

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BAW56S pdf, ピン配列
NXP Semiconductors
BAV756S; BAW56 series
High-speed switching diodes
3. Ordering information
Table 4. Ordering information
Type number Package
Name
Description
BAV756S
SC-88
plastic surface-mounted package; 6 leads
BAW56
-
plastic surface-mounted package; 3 leads
BAW56M
SC-101
leadless ultra small plastic package; 3 solder lands;
body 1.0 0.6 0.5 mm
BAW56S
SC-88
plastic surface-mounted package; 6 leads
BAW56T
SC-75
plastic surface-mounted package; 3 leads
BAW56W
SC-70
plastic surface-mounted package; 3 leads
Version
SOT363
SOT23
SOT883
SOT363
SOT416
SOT323
4. Marking
Table 5. Marking codes
Type number
BAV756S
BAW56
BAW56M
BAW56S
BAW56T
BAW56W
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code[1]
A7*
A1*
S5
A1*
A1
A1*
BAV756S_BAW56_SER
Product data sheet
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per diode
VRRM
repetitive peak reverse
voltage
-
VR reverse voltage
IF forward current
BAV756S
BAW56
BAW56M
BAW56S
BAW56T
BAW56W
Ts = 60 C
Tamb 25 C
Tamb 25 C
Ts = 60 C
Ts = 90 C
Tamb 25 C
-
-
-
-
-
-
-
Max Unit
90 V
90 V
250 mA
215 mA
150 mA
250 mA
150 mA
150 mA
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 18 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
3 of 16


3Pages


BAW56S 電子部品, 半導体
NXP Semiconductors
BAV756S; BAW56 series
High-speed switching diodes
103
IF
(mA)
102
006aab109
10
(1) (2) (3) (4)
1
101
0.2 0.6 1.0 1.4
VF (V)
(1) Tamb = 150 C
(2) Tamb = 85 C
(3) Tamb = 25 C
(4) Tamb = 40 C
Fig 1. Forward current as a function of forward
voltage; typical values
102
IR
(μA)
10
(1)
006aab110
1 (2)
101
102
103
(3)
104
(4)
105
0
20 40 60 80 100
VR (V)
(1) Tamb = 150 C
(2) Tamb = 85 C
(3) Tamb = 25 C
(4) Tamb = 40 C
Fig 3. Reverse current as a function of reverse
voltage; typical values
102
IFSM
(A)
10
mbg704
1
101
1
10 102 103 104
tp (μs)
Based on square wave currents.
Tj = 25 C; prior to surge
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
2.5
Cd
(pF)
2.0
mbh191
1.5
1.0
0.5
0
0 5 10 15
f = 1 MHz; Tamb = 25 C
20 25
VR (V)
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
BAV756S_BAW56_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 18 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
6 of 16

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