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PDF IXGQ85N33PCD1 Data sheet ( Hoja de datos )
| Número de pieza | IXGQ85N33PCD1 | |
| Descripción | High Speed IGBT | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Advance Technical Information
PolarTM High Speed
IGBT
with Anti-Parallel Diode
for PDP Sustain Circuit
IXGQ85N33PCD1
VCES
ICP
VCE(sat)
=
=
≤
330 V
340 A
2.1 V
Symbol
V
CES
Test Conditions
TJ = 25°C to 150°C
VGEM
IC25
ICP
IDP
IC(RMS)
SSOA
(RBSOA)
TC = 25°C, IGBT chip capability
TJ ≤ 150°C, tp ≤ 1 μs, D ≤ 1%
TJ ≤ 150°C, tp < 10 μs
Lead current limit
VGE = 15 V, TVJ = 150°C, RG = 20 Ω
Clamped inductive load, VCE < 300 V
PC TC = 25°C
TJ
TJM
T
stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Plastic body
Md Mounting torque
Weight
Maximum Ratings
330 V
TO-3P
±30 V
85
340
40
A GC
A E (TAB)
G = Gate
C = Collector
A E = Emitter TAb = Collector
75 A
ICM = 96
A
150
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
Features
• International standard package
• Fast tfi for minimum turn off
switching losses
• MOS Gate turn-on
- drive simplicity
• Positive dVsat/dt for
paralleling
260
1.3/10
5.5
Nm/lb.in.
g
≤
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
V
GE(th)
IC = 1 mA, VCE = VGE
3.0 6.0 V
ICES VCE = 330 V
VGE = 0 V
TJ = 125°C
1 μA
200 μA
IGES VCE = 0 V, VGE = ±20 V
±100 nA
VCE(sat)
VGE = 15V,
Note 1
IC = 50 A
TJ = 125°C
IC = 100 A
TJ = 125°C
1.43 2.1 V
1.47 V
1.85 3.0 V
2.0 V
© 2006 IXYS CORPORATION, All rights reserved
DS99610D(02/07)
1 page  
Fig. 13. Re s is tive Tur n-Off Sw itching
Tim e vs . Colle ctor Curre nt
200
180 TJ = 125ºC
t d(off)
RG = 5Ω ,
, tf - - - - -
VGE = 15V
160 VCE = 240V
140
120
100 25ºC < TJ < 125ºC
80
60 TJ = 25ºC
40
20 30 40 50 60 70 80 90
I C - A mperes
100
90
80
70
60
50
40
30
20
10
0
50
Fig. 15. Re ve r s e -Bias Safe
Ope r ating Are a
TJ = 150ºC
RG = 20Ω
dV/dT < 10V/ns
100 150 200 250 300
V C E - V olts
350
10000
1000
Fig. 17. Capacitance
f = 1 MH z
Cies
Coes
100
C res
10
0
5 10 15 20 25 30 35 40
V C E - V olts
© 2006 IXYS CORPORATION, All rights reserved
IXGQ85N33PCD1
Fig. 14. Re s is tive Tur n-off Sw itching
Tim e vs . Gate Re s is tance
240
220
t d(off)
, tf - - - - -
T J = 125ºC , VGE = 15V
200
VCE = 240V
180
160 IC = 21A
85A
140 42.5A
120
100 21A
42.5A
80 85A
60
0 2 4 6 8 10 12 14 16 18 20
R G- Ohms
Fig. 16. Gate Charge
16
14 VCE = 150V
12 I C = 42.5A
I G = 10mA
10
8
6
4
2
0
0 10 20 30 40 50 60 70 80
Q G - nanoCoulombs
Fig. 18. M axim um Tr ans ie nt The r m al
Re s is tance
1.00
0.10
0.01
0.00001 0.0001 0.001 0.01
0.1
Pulse Width - Seconds
1
10
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXGQ85N33PCD1.PDF ] | |
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