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IRF6626PbF の電気的特性と機能

IRF6626PbFのメーカーはInternational Rectifierです、この部品の機能は「DirectFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF6626PbF
部品説明 DirectFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF6626PbF Datasheet, IRF6626PbF PDF,ピン配置, 機能
PD - 97218
IRF6626PbF
IRF6626TRPbF
l RoHs Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 4.0m@ 10V 5.2m@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
19nC 6.7nC 1.6nC 5.4nC 13nC 1.8V
ST DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT
Description
The IRF6626PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6626PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6626PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
Max.
30
±20
16
13
72
130
24
13
Units
V
A
mJ
A
15
ID = 16A
10
TJ = 125°C
5
TJ = 25°C
0
345678
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
6.0
5.0 ID= 13A VDS= 24V
4.0 VDS= 15V
3.0
2.0
1.0
0.0
0
10 20 30
QG Total Gate Charge (nC)
Fig 2. Typical On-Resistance vs. Gate Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.29mH, RG = 25, IAS = 13A.
1
05/29/06

1 Page





IRF6626PbF pdf, ピン配列
Absolute Maximum Ratings
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
ePower Dissipation
ePower Dissipation
fPower Dissipation
Parameter
TP Peak Soldering Temperature
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
emJunction-to-Ambient
kmJunction-to-Ambient
lmJunction-to-Ambient
fmJunction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
IRF6626PbF
Max.
2.2
1.4
42
270
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
0.017
Max.
58
–––
–––
3.0
–––
Units
W
°C
Units
°C/W
W/°C
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
Ri (°C/W) τi (sec)
0.01
R 1R 1
R 2R 2
R 3R 3
R 4R 4
R 5R 5
0.6677 0.000066
τJ τJ τAτ 1.0463 0.000896
0.1
τ1 τ1
τ2 τ2
τ3 τ3
τ4 τ4
τ5 τ5
1.5612 0.004386
29.2822 0.686180
0.01
SINGLE PULSE
( THERMAL RESPONSE
)CiC= iτiRi/iRi
25.4550 32
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10 100
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
‰ Used double sided cooling , mounting pad.
Š Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
‹ Rθ is measured at TJ of approximately 90°C.
ƒ Surface mounted on 1 in. square Cu
(still air).
www.irf.com
‰ Mounted to a PCB with
small clip heatsink (still air)
Š Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3


3Pages


IRF6626PbF 電子部品, 半導体
IRF6626PbF
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 15a. Gate Charge Test Circuit
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 15b. Gate Charge Waveform
15V
VDS
L
VRGGS
20V
tp
D.U.T
IAS
0.01
DRIVER
+
-
VDD
A
Fig 16a. Unclamped Inductive Test Circuit
VDS
LD
+
VDD -
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 17a. Switching Time Test Circuit
6
V(BR)DSS
tp
IAS
Fig 16b. Unclamped Inductive Waveforms
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 17b. Switching Time Waveforms
www.irf.com

6 Page



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部品番号部品説明メーカ
IRF6626PbF

DirectFET Power MOSFET

International Rectifier
International Rectifier


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