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PDF IRF6714MTRPbF Data sheet ( Hoja de datos )
| Número de pieza | IRF6714MTRPbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 96130A
IRF6714MPbF
IRF6714MTRPbF
DirectFET Power MOSFET
l RoHs Compliant and Halogen Free
l Low Profile (<0.6 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 1.6mΩ@ 10V 2.6mΩ@ 4.5V
l Optimized for High Frequency Switching
Qg tot
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
29nC
Qgd
8.3nC
Qgs2
4.1nC
Qrr
36nC
Qoss
23nC
Vgs(th)
1.9V
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
MX
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MP
Description
The IRF6714MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6714MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6714MPbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6714MPbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
25
±20
V
29
23
166
A
234
175 mJ
23 A
5
4 ID = 29A
3
2 TJ = 125°C
1
TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance Vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
14
12 ID= 23A
10
VDS= 20V
VDS= 13V
8
6
4
2
0
0 10 20 30 40 50 60 70 80
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.651mH, RG = 25Ω, IAS = 23A.
1
04/29/09
1 page  
IRF6714MPbF
1000
100 TJ = 150°C
TJ = 25°C
TJ = -40°C
10
1
VGS = 0V
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Fig 10. TypicaVl SSDo,uSrocuer-cDe-rtao-inDrDainioVdoeltaFgoer(wV)ard Voltage
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10
1msec
1
DC 10msec
0.1 TA = 25°C
TJ = 150°C
Single Pulse
0.01
0.01
0.10
1.00
10.00 100.00
Fig11. MVDaxSi,mDuramin-tSo-aSfoeuOrcepeVroaltatigneg(VA) rea
180
160
140
120
100
80
60
40
20
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
800
700
600
500
3.5
3.0
2.5
2.0
ID = 100µA
1.5 ID = 250µA
ID = 1.0mA
1.0 ID = 1.0A
0.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP 2.43A
3.22A
BOTTOM 23.0A
400
300
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
www.irf.com
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
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| PDF Descargar | [ Datasheet IRF6714MTRPbF.PDF ] | |
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