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IRF8304MPBF の電気的特性と機能

IRF8304MPBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF8304MPBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF8304MPBF Datasheet, IRF8304MPBF PDF,ピン配置, 機能
IRF8304MPbF
l RoHS Compliant and Halogen Free 
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
l Ultra Low Package Inductance
l Optimized for High Frequency Switching 
l Ideal for CPU Core DC-DC Converters
l Optimized for both Sync.FET and some Control FET
application
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques 
l 100% Rg tested
DirectFET® Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 1.7m@ 10V 2.4m@ 4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
28nC 7.9nC 4.2nC 39nC 21nC 1.8V
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
MX
DirectFET® ISOMETRIC
SQ SX ST
MQ MX MT MP
Description
The IRF8304MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET® package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF8304MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF8304MPbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Base Part number
IRF8304MPbF
Package Type
DirectFET MX
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
IRF8304MTRPbF
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
6
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
5 ID = 28A
4
3
2 TJ = 125°C
1 TJ = 25°C
0
0 5 10 15 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
1 www.irf.com © 2014 International Rectifier
Max.
30
±20
28
22
170
220
190
22
14.0
12.0 ID= 22A VDS= 24V
10.0 VDS= 15V
8.0 VDS= 6.0V
Units
V
A
mJ
A
6.0
4.0
2.0
0.0
0
10 20 30 40 50 60 70 80
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.75mH, RG = 25, IAS = 22A.
Submit Datasheet Feedback
February 17, 2014

1 Page





IRF8304MPBF pdf, ピン配列
Absolute Maximum Ratings
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
TP
ePower Dissipation
ePower Dissipation
fPower Dissipation
Parameter
Peak Soldering Temperature
TJ
TSTG
Operating Junction and
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
elJunction-to-Ambient
jlJunction-to-Ambient
klJunction-to-Ambient
flJunction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
IRF8304MPbF
Max.
2.8
1.8
100
270
-40 to + 150
Units
W
°C
Typ.
–––
12.5
20
–––
1.0
0.022
Max.
45
–––
–––
1.2
–––
Units
°C/W
W/°C
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
R 1R 1
R2R2
R 3R 3
R 4R 4
Ri (°C/W) τi (sec)
τJ τJ
τ1 τ1
τ2 τ2
τ3 τ3
τ4 τ4
τAτA
1.3216
5.1963
21.489
0.000312
0.040534
1.0378
Ci= τi/Ri
Ci= τi/Ri
17.005 46
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-005 0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
10 100 1000
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient ƒ
Notes:
ˆ Used double sided cooling , mounting pad with large heatsink.
‰ Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Š Rθ is measured at TJ of approximately 90°C.
ƒ Surface mounted on 1 in. square Cu
(still air).
‰ Mounted to a PCB with
small clip heatsink (still air)
‰ Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
February 17, 2014


3Pages


IRF8304MPBF 電子部品, 半導体
IRF8304MPbF
L
VCC
DUT
0
210K S
Fig 15a. Gate Charge Test Circuit
Id
Vgs
Vds
Vgs(th)
Qgodr
Qgd Qgs2 Qgs1
Fig 15b. Gate Charge Waveform
15V
VDS
L
VRGSG
20V
tp
D.U.T
IAS
0.01
DRIVER
+
-
VDD
A
Fig 16a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 16b. Unclamped Inductive Waveforms
VDS
VGS
RG
RD
D.U.T.
+- VDD
VDS
90%
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 17a. Switching Time Test Circuit
10%
VGS
td(on) tr
td(off) tf
Fig 17b. Switching Time Waveforms
6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 17, 2014

6 Page



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部品番号部品説明メーカ
IRF8304MPBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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