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IS63LV1024L の電気的特性と機能

IS63LV1024LのメーカーはIntegrated Silicon Solutionです、この部品の機能は「128K x 8 HIGH-SPEED CMOS STATIC RAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 IS63LV1024L
部品説明 128K x 8 HIGH-SPEED CMOS STATIC RAM
メーカ Integrated Silicon Solution
ロゴ Integrated Silicon Solution ロゴ 




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IS63LV1024L Datasheet, IS63LV1024L PDF,ピン配置, 機能
IS63LV1024
IS63LV1024L
128K x 8 HIGH-SPEED CMOS STATIC RAM
3.3V REVOLUTIONARY PINOUT
MAY 2012
FEATURES
• High-speed access times:
8, 10, 12 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with CE and OE
options
CE power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 3.3V power supply
• Packages available:
– 32-pin 300-mil SOJ
– 32-pin 400-mil SOJ
– 32-pin TSOP (Type II)
– 32-pin STSOP (Type I)
– 36-pin BGA (8mmx10mm)
• Lead-free Available
DESCRIPTION
The ISSI IS63LV1024/IS63LV1024L is a very high-speed,
low power, 131,072-word by 8-bit CMOS static RAM in
revolutionary pinout. The IS63LV1024/IS63LV1024L is fab-
ricated using ISSI's high-performance CMOS technology.
This highly reliable process coupled with innovative circuit
design techniques, yields higher performance and low
power consumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 250 µW (typical) with CMOS input levels.
The IS63LV1024/IS63LV1024L operates from a single 3.3V
power supply and all inputs are TTL-compatible.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
VDD
GND
I/O0-I/O7
DECODER
128K X 8
MEMORY ARRAY
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
CONTROL
CIRCUIT
Copyright © 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. P
05/09/2012
1

1 Page





IS63LV1024L pdf, ピン配列
IS63LV1024
IS63LV1024L
TRUTH TABLE
Mode
Not Selected
(Power-down)
Output Disabled
Read
Write
WE
X
H
H
L
CE
H
L
L
L
OE
X
H
L
X
I/O Operation
High-Z
High-Z
DOUT
DIN
VDD Current
ISB1, ISB2
ICC1, ICC2
ICC1, ICC2
ICC1, ICC2
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
VTERM
TSTG
PT
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
Value
–0.5 to VDD + 0.5
–65 to +150
1.0
Unit
V
°C
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
VDD
3.3V ± 0.3V
3.3V ± 0.15V
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
VOH Output HIGH Voltage
VOL Output LOW Voltage
VIH Input HIGH Voltage
VIL Input LOW Voltage(1)
ILI Input Leakage
Test Conditions
VDD = Min., IOH = –4.0 mA
VDD = Min., IOL = 8.0 mA
GND VIN VDD
ILO Output Leakage
GND VOUT VDD, Outputs Disabled
Com.
Ind.
Com.
Ind.
Min.
2.4
2.2
–0.3
–1
–5
–1
–5
Max.
0.4
VDD + 0.3
0.8
1
5
1
5
Unit
V
V
V
V
µA
µA
Note:
1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width under Vss < 5ns). Not 100% tested.
VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width over VDD < 5ns). Not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. P
05/09/2012
3


3Pages


IS63LV1024L 電子部品, 半導体
IS63LV1024
IS63LV1024L
AC WAVEFORMS
READ CYCLE NO. 1(1,2)
ADDRESS
DOUT
PREVIOUS DATA VALID
t OHA
t RC
t AA
t OHA
DATA VALID
READ1.eps
READ CYCLE NO. 2(1,3)
ADDRESS
OE
CE
DOUT
t LZCE
HIGH-Z
t RC
t AA
t DOE
t LZOE
t ACE
t HZCE
DATA VALID
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE = VIL.
3. Address is valid prior to or coincident with CE LOW transitions.
t OHA
t HZOE
CE_RD2.eps
6 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. P
05/09/2012

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IS63LV1024

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

Integrated Silicon Solution  Inc
Integrated Silicon Solution Inc
IS63LV1024-10J

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

Integrated Silicon Solution  Inc
Integrated Silicon Solution Inc
IS63LV1024-10JI

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

Integrated Silicon Solution  Inc
Integrated Silicon Solution Inc
IS63LV1024-10K

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

Integrated Silicon Solution  Inc
Integrated Silicon Solution Inc


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