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PDF IRF6665TRPbF Data sheet ( Hoja de datos )
| Número de pieza | IRF6665TRPbF | |
| Descripción | Digital Audio MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 97230A
IRF6665PbF
DIGITAL AUDIO MOSFET
IRF6665TRPbF
Features
• Latest MOSFET Silicon technology
• Key parameters optimized for Class-D audio amplifier
applications
• Low RDS(on) for improved efficiency
• Low Qg for better THD and improved efficiency
• Low Qrr for better THD and lower EMI
• Low package stray inductance for reduced ringing and lower
EMI
• Can deliver up to 100W per channel into 8Ω with no heatsink
• Dual sided cooling compatible
· Compatible with existing surface mount technologies
· RoHS compliant containing no lead or bromide
·Lead-Free (Qualified up to 260°C Reflow)
Key Parameters
VDS 100
RDS(on) typ. @ VGS = 10V
Qg typ.
RG(int) typ.
53
8.7
1.9
V
m:
nC
SH DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
SQ SX ST SH MQ MX MT
MN
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI.
The IRF6665PbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETTM package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The
DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis-
tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for
Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
PD @TC = 25°C
PD @TA = 25°C
PD @TA = 70°C
Maximum Power Dissipation
ePower Dissipation
ePower Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
100
± 20
19
4.2
3.4
34
42
2.2
1.4
0.017
-40 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
ekJunction-to-Ambient
hkJunction-to-Ambient
ikJunction-to-Ambient
jkJunction-to-Case
Junction-to-PCB Mounted
Notes through are on page 2
www.irf.com
Typ.
–––
12.5
20
–––
1.4
Max.
58
–––
–––
3.0
–––
Units
°C/W
1
08/25/06
1 page  
200
180 ID = 5.0A
160
140
120
100 TJ = 125°C
80
60
40 TJ = 25°C
20
0
4 6 8 10 12 14 16 18
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 15a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 15b. Unclamped Inductive Waveforms
VDS
RD
VGS
RG
D.U.T.
+
-
VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 16a. Switching Time Test Circuit
www.irf.com
IRF6665PbF
120
100 TJ = 125°C
80
60 TJ = 25°C
Vgs = 10V
40
0
2468
ID, Drain Current (A)
10
Fig 13. On-Resistance vs. Drain Current
50
ID
TOP
0.86A
40 1.3A
BOTTOM 5.0A
30
20
10
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 16b. Switching Time Waveforms
5
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| PDF Descargar | [ Datasheet IRF6665TRPbF.PDF ] | |
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