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IRF7468PbFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRF7468PbF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7468PbFダウンロード(pdfファイル)リンクがあります。 Total 8 pages
SMPS MOSFET
PD - 95344
IRF7468PbF
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
l Lead-Free
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
VDSS
40V
HEXFET® Power MOSFET
RDS(on) max(mW) ID
15.5@VGS = 10V 9.4A
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
40
± 12
9.4
7.5
75
2.5
1.6
0.02
-55 to + 150
Units
V
V
A
W
W
mW/°C
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Notes through
are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
8/17/04
1 Page 1000
100
VGS
TOP 15V
10V
4.50V
3.00V
2.70V
2.50V
2.25V
BOTTOM 2.00V
10
1
0.1
0.1
2.0V
20µs PULSE WIDTH
TJ= 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
IRF7468PbF
1000
100
VGS
TOP 15V
10V
4.50V
3.00V
2.70V
2.50V
2.25V
BOTTOM 2.00V
10
2.0V
20µs PULSE WIDTH
TJ= 150 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 150° C
10
TJ = 25° C
1
0.1
2.0
V DS= 15V
20µs PULSE WIDTH
2.4 2.8 3.2
VGS, Gate-to-Source Voltage (V)
3.6
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0 ID = 10A
1.5
1.0
0.5
VGS = 4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF7468PbF
0.020
0.025
0.018
0.016
0.014
VGS = 4.5V
0.012
0.010
0
VGS = 10V
20 40 60 80
ID , Drain Current (A)
100
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
VGS
3mA
D.U.T.
+
-VDS
VGS
QGS
VG
IG ID
Current Sampling Resistors
QG
QGD
Charge
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
0.020
0.015
ID = 10A
0.010
2.0
4.0 6.0 8.0 10.0 12.0 14.0 16.0
VGS, Gate -to -Source Voltage (V)
Fig 13. On-Resistance Vs. Gate Voltage
400
ID
TOP
3.6A
6.4A
BOTTOM 8.0A
300
200
V(BR)DSS
tp
I AS
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
15V
DRIVER
100
+
-
VDD
A
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
6
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRF7468PbF | Power MOSFET ( Transistor ) | International Rectifier |