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FSF055R1 の電気的特性と機能

FSF055R1のメーカーはIntersil Corporationです、この部品の機能は「25A/ 60V/ 0.020 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 FSF055R1
部品説明 25A/ 60V/ 0.020 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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FSF055R1 Datasheet, FSF055R1 PDF,ピン配置, 機能
FSF055D, FSF055R
June 1998
25A, 60V, 0.020 Ohm, Rad Hard,
SEGR Resistant, N-Channel Power MOSFETs
Features
• 25A, 60V, rDS(ON) = 0.020
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 6.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K Commercial FSF055D1
10K TXV
FSF055D3
100K
100K
Commercial
TXV
FSF055R1
FSF055R3
100K
Space
FSF055R4
Description
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs specif-
ically designed for commercial and military space applica-
tions. Enhanced Power MOSFET immunity to Single Event
Effects (SEE), Single Event Gate Rupture (SEGR) in particu-
lar, is combined with 100K RADS of total dose hardness to
provide devices which are ideally suited to harsh space envi-
ronments. The dose rate and neutron tolerance necessary
for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Symbol
D
G
Formerly available as type TA17650.
S
Package
TO-254AA
G
S
D
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-95
File Number 4052.2

1 Page





FSF055R1 pdf, ピン配列
FSF055D, FSF055R
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
Forward Voltage
VSD
ISD = 25A
0.6
Reverse Recovery Time
trr ISD = 25A, dISD/dt = 100A/µs
-
Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified
-
-
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Volts (Note 3)
BVDSS VGS = 0, ID = 1mA
60
Gate to Source Threshold Volts (Note 3)
VGS(TH) VGS = VDS, ID = 1mA
1.5
Gate to Body Leakage
(Notes 2, 3)
IGSS
VGS = ±20V, VDS = 0V
-
Zero Gate Leakage
(Note 3)
IDSS
VGS = 0, VDS = 48V
-
Drain to Source On-State Volts (Notes 1, 3)
VDS(ON) VGS = 12V, ID = 25A
-
Drain to Source On Resistance (Notes 1, 3)
rDS(ON)12 VGS = 12V, ID = 25A
-
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.
Single Event Effects (SEB, SEGR) (Note 4)
MAX
1.8
290
MAX
-
4.0
100
25
0.525
0.020
UNITS
V
ns
UNITS
V
V
nA
µA
V
TEST
SYMBOL
ENVIRONMENT (NOTE 5)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
APPLIED
VGS BIAS
(V)
Single Event Effects Safe Operating
SEESOA
Ni
26
43 -20
Area
Br 37 36 -10
Br 37 36 -15
Br 37 36 -20
I 60 31 0
I 60 31 -5
I 60 31 -10
I 60 31 -15
I 60 31 -20
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
(NOTE 6)
MAXIMUM
VDS BIAS (V)
60
60
48
36
60
48
36
24
12
Typical Performance Curves Unless Otherwise Specified
1 - LET = 26MeV/mg/cm2, RANGE = 43µ
2 - LET = 37MeV/mg/cm2, RANGE = 36µ
3 - LET = 60MeV/mg/cm2, RANGE = 31µ
70
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
60
50 1
40
30 2
20 3
10
TEMP = 25oC
0
0 -5 -10 -15 -20 -25
VGS (V)
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
1E-3
1E-4
1E-5
1E-6
ILM = 10A
30A
100A
300A
1E-7
10
30 100 300
DRAIN SUPPLY (V)
1000
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO IAS
3-97


3Pages


FSF055R1 電子部品, 半導体
FSF055D, FSF055R
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Gate to Source Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain to Source On Resistance
rDS(ON)
Gate Threshold Voltage
VGS(TH)
NOTES:
7. Or 100% of Initial Reading (whichever is greater).
8. Of Initial Reading.
VGS = ±20V
VDS = 80% Rated Value
TC = 25oC at Rated ID
ID = 1.0mA
±20 (Note 7)
±25 (Note 7)
±20% (Note 8)
±20% (Note 8)
nA
µA
V
Screening Information
TEST
JANTXV EQUIVALENT
JANS EQUIVALENT
Gate Stress
Pind
VGS = 30V, t = 250µs
Optional
VGS = 30V, t = 250µs
Required
Pre Burn-In Tests (Note 9)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
Steady State Gate
Bias (Gate Stress)
Interim Electrical Tests (Note 9)
MIL-STD-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours
MIL-STD-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours
All Delta Parameters Listed in the Delta Tests All Delta Parameters Listed in the Delta Tests
and Limits Table
and Limits Table
Steady State Reverse
Bias (Drain Stress)
PDA
MIL-STD-750, Method 1042, Condition A
VDS
TA =
= 80% of Rated Value,
150oC, Time = 160 hours
10%
MIL-STD-750, Method 1042, Condition A
VDS
TA =
= 80% of Rated Value,
150oC, Time = 240 hours
5%
Final Electrical Tests (Note 9)
MIL-S-19500, Group A, Subgroup 2
MIL-S-19500, Group A,
Subgroups 2 and 3
NOTE:
9. Test limits are identical pre and post burn-in.
Additional Screening Tests
PARAMETER
Safe Operating Area
Unclamped Inductive Switching
Thermal Response
Thermal Impedance
SYMBOL
SOA
IAS
VSD
VSD
TEST CONDITIONS
VDS = 48V, t = 10ms
VGS(PEAK) = 15V, L = 0.1mH
tH = 100ms; VH = 25V; IH = 4A
tH = 500ms; VH = 25V; IH = 4A
MAX
6.8
200
130
240
UNITS
A
A
mV
mV
3-100

6 Page



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共有リンク

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部品番号部品説明メーカ
FSF055R

25A/ 60V/ 0.020 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs

Intersil Corporation
Intersil Corporation
FSF055R1

25A/ 60V/ 0.020 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs

Intersil Corporation
Intersil Corporation
FSF055R3

25A/ 60V/ 0.020 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs

Intersil Corporation
Intersil Corporation
FSF055R4

25A/ 60V/ 0.020 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs

Intersil Corporation
Intersil Corporation


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