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PDF FW907 Data sheet ( Hoja de datos )
| Número de pieza | FW907 | |
| Descripción | N-Channel and P-Channel Silicon MOSFETs | |
| Fabricantes | Sanyo | |
| Logotipo |  |
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Ordering number : ENA1810
FW907
SANYO Semiconductors
DATA SHEET
FW907
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
• ON-resistance Nch: RDS(on)1=13mΩ(typ.), Pch: RDS(on)1=20mΩ(typ.)
• 4V drive
• N-channel MOSFET + P-channel MOSFET
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤100ms)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
ID
ID
IDP
PD
PT
Tch
Tstg
Conditions
Duty cycle≤1%
Duty cycle≤1%
Duty cycle≤1%
When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s
When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s
N-channel P-channel
30 --30
±20 ±20
10 --8
11.5
--9
24 --19
52 --52
2.3
2.5
150
--55 to +150
Unit
V
V
A
A
A
A
W
W
°C
°C
Package Dimensions
unit : mm (typ)
7005A-003
5.0
85
0.2
Product & Package Information
• Package
: SOP8
• JEITA, JEDEC
: SC-87, SOT96
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type : TL
Marking
1
1.27
0.1
1 : Source1
2 : Gate1
3 : Source2
4 4 : Gate2
0.43 5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
TL
Electrical Connection
8765
W907
LOT No.
SANYO : SOP8
1234
http://semicon.sanyo.com/en/network
72810PA TK IM TC-00002249 No. A1810-1/6
1 page  
FW907
RDS(on) -- VGS
80
70
60 ID= --4A
--8A
50
[Pch]
Ta=25°C
40
30
20
10
0
0 --2 --4 --6 --8 --10 --12 --14 --16
3
Gate-to-Source
| yfs
V| ol-t-ageID, VGS
--
V
IT15855
[Pch]
2 VDS= --10V
10
7
5
3
2
Ta= --25°C
75°C
25°C
1.0
7
5
3
2
0.1
--0.01 2 3
3
2
5 7--0.1 2 3 5 7--1.0 2 3
Drain
SW
Current,
Time
I-D-
-- A
ID
5 7 --10 2 3
IT15857
[Pch]
VDD= --15V
VGS= --10V
td(off)
100
7 tf
5
3
2
tr
10
7
5
--0.1
23
--10
VDS= --15V
--9 ID= --8A
--8
td(on)
5 7 --1.0
23
5
Drain Current,
VGS --
IQDg--
A
7 --10
23
IT15859
[Pch]
--7
--6
--5
--4
--3
--2
--1
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Total Gate Charge, Qg -- nC
IT15861
RDS(on) -- Ta
[Pch]
70
60
50
40
30
20
V GVVSG=GS-=S-4=-.-04-V-.15,0VI.D,0I=VD,-=-I4D-A-=4A--8A
10
0
--60 --40 --20 0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT15856
3
IS -- VSD
[Pch]
2 VGS=0V
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
--0.2
3
2
--0.4
--0.6
--0.8
--1.0
Diode
Ciss,
Forward Voltage,
Coss, Crss
V-S-DV--DVS
--1.2
IT15858
[Pch]
f=1MHz
1000
7
5
Ciss
3
2 Coss
Crss
100
7
0 --5 --10 --15 --20 --25 --30
Drain-to-Source
A
Voltage,
SO
VDS
--
V
IT15860
[Pch]
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
IDP= --52A (PW≤10μs)
ID= --8A
1001m0ms 1sms100μs10μs
Operation in this
DC
10s
operation
area is limited by RDS(on).
7
5
Ta=25°C
3
2
--0.01
Single pulse
When mounted on ceramic substrate
(2000mm2×0.8mm) 1unit
--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 5
Drain-to-Source Voltage, VDS -- V IT15862
No. A1810-5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FW907.PDF ] | |
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