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PDF FW906 Data sheet ( Hoja de datos )
| Número de pieza | FW906 | |
| Descripción | N-Channel and P-Channel Silicon MOSFETs | |
| Fabricantes | Sanyo | |
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Ordering number : ENA1809
FW906
SANYO Semiconductors
DATA SHEET
FW906
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
• ON-resistance Nch: RDS(on)1=18mΩ(typ.), Pch: RDS(on)1=31mΩ(typ.)
• 4V drive
• N-channel MOSFET + P-channel MOSFET
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤100ms)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
ID
ID
IDP
PD
PT
Tch
Tstg
Conditions
Duty cycle≤1%
Duty cycle≤1%
Duty cycle≤1%
When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s
When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s
N-channel P-channel
30 --30
±20 ±20
8 --6
9 --7
20 --15
52 --52
2.3
2.5
150
--55 to +150
Unit
V
V
A
A
A
A
W
W
°C
°C
Package Dimensions
unit : mm (typ)
7005A-003
5.0
85
0.2
Product & Package Information
• Package
: SOP8
• JEITA, JEDEC
: SC-87, SOT96
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type : TL
Marking
1
1.27
0.1
1 : Source1
2 : Gate1
3 : Source2
4 4 : Gate2
0.43 5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
TL
Electrical Connection
8765
W906
LOT No.
SANYO : SOP8
1234
http://semicon.sanyo.com/en/network
72110PA TK IM TC-00002248 No. A1809-1/6
1 page  
RDS(on) -- VGS
120
100
ID= --3A
--6A
80
60
40
20
FW906
[Pch]
Ta=25°C
120
100
80
60
40
20
RDS(on) -- Ta
[Pch]
VGVSG=S--=4.-0-4V.,5IVD, =ID--=3A--3A
VGS= --10.0V, ID= --6A
0
0 --2 --4 --6 --8 --10 --12 --14 --16
3
Gate-to-Source
| yfs
V| ol-t-ageID, VGS
--
V
IT15833
[Pch]
2 VDS= --10V
10
7
5
3
2
1.0
Ta= --25°C
75°C
25°C
7
5
3
2
0.1
--0.01 2 3
2
100
7
5
3
5 7 --0.1 2 3 5 7 --1.0 2 3
Drain
SW
Current,
Time
I-D-
-- A
ID
5 7 --10 2
IT15835
[Pch]
td(off)
VDD= --15V
VGS= --10V
tf
2
tr
10
7 td(on)
5
3
2
--0.1
23
--10
VDS= --15V
--9 ID= --6A
--8
5 7 --1.0
23 5
Drain Current,
VGS --
IQDg--
A
7 --10
2
IT15837
[Pch]
--7
--6
--5
--4
--3
--2
--1
0
0 1 2 3 4 5 6 7 8 9 10 11 12
Total Gate Charge, Qg -- nC
IT15839
0
--60 --40 --20 0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT15834
2
IS -- VSD
[Pch]
VGS=0V
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
--0.2
2
--0.4
--0.6
--0.8
--1.0
Diode
Ciss,
Forward Voltage,
Coss, Crss
V-S-DV--DVS
--1.2
IT15836
[Pch]
f=1MHz
1000
7
5
Ciss
3
2
Coss
100 Crss
7
5
0 --5 --10 --15 --20 --25 --30
Drain-to-Source
A
Voltage,
SO
VDS
--
V
IT15838
[Pch]
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
IDP= --52A (PW≤10μs)
ID= --6A
1001m0ms1ms s100μ1s0μs
Operation in this
DC
10s
operation
area is limited by RDS(on).
7
5
3
2
--0.01
Ta=25°C
Single pulse
When mounted on ceramic substrate
(2000mm2×0.8mm) 1unit
--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 5
Drain-to-Source Voltage, VDS -- V IT15840
No. A1809-5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FW906.PDF ] | |
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