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IRFSL4020PbF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFSL4020PbF
部品説明 Digital Audio MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRFSL4020PbF Datasheet, IRFSL4020PbF PDF,ピン配置, 機能
PD - 97393
IRFS4020PbF
DIGITAL AUDIO MOSFET IRFSL4020PbF
Features
Key parameters optimized for Class-D audio
amplifier applications
Low RDSON for improved efficiency
Low QG and QSW for better THD and improved
efficiency
Low QRR for better THD and lower EMI
175°C operating junction temperature for
ruggedness
Can deliver up to 300W per channel into 8load in
Key Parameters
VDS
RDS(ON) typ. @ 10V
Qg typ.
Qsw typ.
200
85
18
6.7
RG(int) typ.
TJ max
3.2
175
D
D
D
V
m
nC
nC
°C
half-bridge configuration amplifier
G
DS
G
DS
G
S
D2Pak
IRFS4020PbF
TO-262
IRFSL4020PbF
GDS
Gate
Drain
Source
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Parameter
fRθJC Junction-to-Case
fRθJA Junction-to-Ambient (PCB Mount)
Max.
200
±20
18
13
52
100
52
0.70
-55 to + 175
300
Typ.
–––
–––
Max.
1.43
40
Units
V
A
W
W/°C
°C
Units
°C/W
Notes  through … are on page 2
www.irf.com
1
05/14/09

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