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IRF3007PbF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRF3007PbF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRF3007PbF Datasheet, IRF3007PbF PDF,ピン配置, 機能
PD -95618A
IRF3007PbF
Typical Applications
l Industrial Motor Drive
Features
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This design of HEXFET® Power MOSFETs utilizes the
lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of
this HEXFET power MOSFET are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating. These combine
to make this design an extremely efficient and reliable
device for use in a wide variety of applications.
G
HEXFET® Power MOSFET
D
VDSS = 75V
RDS(on) = 0.0126
S ID = 75A
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (6 sigma)
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon limited)
Continuous Drain Current, VGS @ 10V (See Fig.9)
Continuous Drain Current, VGS @ 10V (Package limited)
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Single Pulse Avalanche Energy Tested Value‡
Avalanche Current
Repetitive Avalanche Energy†
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
80
56
75
320
200
1.3
± 20
280
946
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
1.1 (10)
Thermal Resistance
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.74
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
°C
N•m (lbf•in)
Units
°C/W
1
07/23/10

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