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PDF IRFSL5620PbF Data sheet ( Hoja de datos )
| Número de pieza | IRFSL5620PbF | |
| Descripción | Digital Audio MOSFET | |
| Fabricantes | International Rectifier | |
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PD - 96205
DIGITAL AUDIO MOSFET IRFS5620PbF
Features
• Key Parameters Optimized for Class-D Audio
Amplifier Applications
• Low RDSON for Improved Efficiency
• Low QG and QSW for Better THD and Improved
Efficiency
• Low QRR for Better THD and Lower EMI
• 175°C Operating Junction Temperature for
Ruggedness
• Can Deliver up to 300W per Channel into 8Ω Load in
Half-Bridge Configuration Amplifier
IRFSL5620PbF
Key Parameters
VDS
RDS(ON) typ. @ 10V
Qg typ.
200
63.7
25
Qsw typ.
9.8
RG(int) typ.
TJ max
2.6
175
V
m:
nC
nC
Ω
°C
DD
D
G
S
G
S
D
G
D2Pak
TO-262
S IRFS5620PbF IRFSL5620PbF
GD S
Gate
Drain
Source
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Parameter
fRθJC
Junction-to-Case
hRθJA Junction-to-Ambient (PCB Mount)
Max.
200
±20
24
17
100
144
72
0.96
-55 to + 175
300
Typ.
–––
–––
Max.
1.045
40
Units
V
A
W
W/°C
°C
Units
°C/W
Notes through are on page 2
www.irf.com
1
12/18/08
1 page  
0.5
ID = 15A
0.4
0.3
0.2
TJ = 125°C
0.1 TJ = 25°C
0
4 6 8 10 12 14
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Gate Voltage
100
16
Duty Cycle = Single Pulse
10 0.01
IRFS/SL5620PbF
500
450 ID
TOP
2.05A
400 2.94A
350 BOTTOM 15A
300
250
200
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy Vs. Drain Current
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14. Typical Avalanche Current Vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 14, 15:
120
TOP
Single Pulse
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
BOTTOM 1.0% Duty Cycle
100 ID = 15A
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long as neither
80 Tjmax nor Iav (max) is exceeded
3. Equation below based on circuit and waveforms shown in
Figures 17a, 17b.
60 4. PD (ave) = Average power dissipation per single
avalanche pulse.
40
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
20
0
25 50 75 100 125 150 175
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy Vs. Temperature
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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