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IRFSL5620PbF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFSL5620PbF
部品説明 Digital Audio MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRFSL5620PbF Datasheet, IRFSL5620PbF PDF,ピン配置, 機能
PD - 96205
DIGITAL AUDIO MOSFET IRFS5620PbF
Features
Key Parameters Optimized for Class-D Audio
Amplifier Applications
Low RDSON for Improved Efficiency
Low QG and QSW for Better THD and Improved
Efficiency
Low QRR for Better THD and Lower EMI
175°C Operating Junction Temperature for
Ruggedness
Can Deliver up to 300W per Channel into 8Load in
Half-Bridge Configuration Amplifier
IRFSL5620PbF
Key Parameters
VDS
RDS(ON) typ. @ 10V
Qg typ.
200
63.7
25
Qsw typ.
9.8
RG(int) typ.
TJ max
2.6
175
V
m:
nC
nC
°C
DD
D
G
S
G
S
D
G
D2Pak
TO-262
S IRFS5620PbF IRFSL5620PbF
GD S
Gate
Drain
Source
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Parameter
fRθJC
Junction-to-Case
hRθJA Junction-to-Ambient (PCB Mount)
Max.
200
±20
24
17
100
144
72
0.96
-55 to + 175
300
Typ.
–––
–––
Max.
1.045
40
Units
V
A
W
W/°C
°C
Units
°C/W
Notes  through † are on page 2
www.irf.com
1
12/18/08

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