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11NM65N の電気的特性と機能

11NM65NのメーカーはSTMicroelectronicsです、この部品の機能は「STD11NM65N」です。


製品の詳細 ( Datasheet PDF )

部品番号 11NM65N
部品説明 STD11NM65N
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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11NM65N Datasheet, 11NM65N PDF,ピン配置, 機能
STD11NM65N, STF11NM65N,
STFI11NM65N, STP11NM65N
N-channel 650 V, 0.425 Ω typ., 11 A MDmesh™II Power MOSFET
in DPAK, TO-220FP, I²PAKFP and TO-220 packages
Datasheet - production data
TAB
3
1
DPAK
1
2
3
I²PAKFP
3
2
1
TO-220FP
TAB
3
2
1
TO-220
Features
Order codes
VDSS @
TJmax
RDS(on)
max
ID
STD11NM65N
STF11NM65N
STFI11NM65N
STP11NM65N
710 V < 0.455 Ω 11 A
100% avalanche tested
Low input capacitance and gate charge
low gate input resistance
Figure 1. Internal schematic diagram
' Ć7$%
Applications
Switching applications
Description
* 
6 
$0Y
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Order codes
STD11NM65N
STF11NM65N
STFI11NM65N
STP11NM65N
Table 1. Device summary
Marking
Packages
11NM65N
DPAK
TO-220FP
I²PAKFP
TO-220
Packaging
Tape and reel
Tube
July 2013
This is information on a product in full production.
Doc ID 13476 Rev 4
1/21
www.st.com

1 Page





11NM65N pdf, ピン配列
STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N
1 Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Value
Parameter
TO-220, DPAK
TO-220FP
I²PAKFP
Unit
VDS Drain-source voltage
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
(2)
IDM Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Avalanche current, repetitive or not-repetitive
IAR (pulse width limited by Tj max)
EAS
(3)
dv/dt
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Peak diode recovery voltage slope
650
± 25
11
7
44
110
(1)
11
(1)
7
(1)
44
25
3
147
15
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink
(t = 1 s; TC = 25 °C)
2500
Tstg Storage temperature
Tj Max. operating junction temperature
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD 11 A, di/dt 400 A/μs; VPeak < V(BR)DSS, VDD 80% V(BR)DSS
- 55 to 150
150
V
V
A
A
A
W
A
mJ
V/ns
V
°C
°C
Symbol
Table 3. Thermal data
Parameter
Value
Unit
DPAK TO-220FP I²PAKFP TO-220
Rthj-case Thermal resistance junction-case max
Thermal resistance junction-ambient
Rthj-amb max
(1)
Rthj-pcb Thermal resistance junction-pcb max
1. When mounted on 1inch² FR-4 board, 2 oz Cu
1.14
50
5
62.5
1.14 °C/W
°C/W
°C/W
Doc ID 13476 Rev 4
3/21
21


3Pages


11NM65N 電子部品, 半導体
Electrical characteristics
STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for DPAK
ID AM13041v1
(A) Tj=150°C
Tc=25°C
Single pulse
10µs
10
Figure 3. Thermal impedance for DPAK
100µs
1 1ms
10ms
0.1
0.1
1
10 100 VDS(V)
Figure 4. Safe operating area for TO-220FP and Figure 5. Thermal impedance for TO-220FP and
I²PAKFP
I²PAKFP
ID AM13040v1
(A) Tj=150°C
Tc=25°C
Single pulse
10
1
OpeLriamtiiotendinbythmisaaxrReaDSis(on)
0.1
10µs
100µs
1ms
10ms
0.01
0.1
1
10 100 VDS(V)
Figure 6. Safe operating area for TO-220
ID AM13039v1
(A) Tj=150°C
Tc=25°C
Single pulse
Figure 7. Thermal impedance for TO-220
10
10µs
100µs
1 1ms
10ms
0.1
0.1
1
10 100 VDS(V)
6/21 Doc ID 13476 Rev 4

6 Page



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共有リンク

Link :


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11NM65

N-CHANNEL POWER MOSFET

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11NM65-U2

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies
11NM65N

STD11NM65N

STMicroelectronics
STMicroelectronics


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