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IRF8707GPbF の電気的特性と機能

IRF8707GPbFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF8707GPbF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF8707GPbF Datasheet, IRF8707GPbF PDF,ピン配置, 機能
PD - 96264
IRF8707GPbF
Applications
HEXFET® Power MOSFET
l Control MOSFET of Sync-Buck
Converters used for Notebook
Processor Power
l Control MOSFET for Isolated
DC-DC Converters in Networking
VDSS
RDS(on) max
Qg
:30V 11.9m @VGS = 10V 6.2nC
Systems
Benefits
l Very Low Gate Charge
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l 100% tested for Rg
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
l Lead-Free
l Halogen-Free
Description
The IRF8707GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8707GPbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
30
± 20
V
11
9.1 A
88
2.5
1.6
W
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
0.02
-55 to + 150
W/°C
°C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fRθJA Junction-to-Ambient
Notes  through … are on page 9
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
07/10/09

1 Page





IRF8707GPbF pdf, ピン配列
100
10
1
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
0.1
0.01
0.1
2.3V
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
IRF8707GPbF
100
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
1
2.3V
0.1
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
10 TJ = 150°C
2.0
ID = 11A
VGS = 10V
1.5
1 TJ = 25°C
VDS = 15V
60µs PULSE WIDTH
0.1
123456
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3


3Pages


IRF8707GPbF 電子部品, 半導体
IRF8707GPbF
35 250
ID = 11A
30 200
25
150
20
15
TJ = 125°C
100
10
TJ = 25°C
50
ID
TOP
0.67A
0.82A
BOTTOM 8.80A
5
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
V(BR)DSS
15V tp
VDS
L
RG
20V
tp
D.U.T
IAS
0.01
DRIVER
+
-
VDD A
I AS
Fig 14. Unclamped Inductive Test Circuit
and Waveform
Id
0
Vgs
L
DUT
210KK S
VCC
Fig 15. Gate Charge Test Circuit
Vds
Vgs(th)
Qgodr
Qgd Qgs2 Qgs1
Fig 16. Gate Charge Waveform
6 www.irf.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRF8707GPbF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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