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IRFSL4510PbF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFSL4510PbF
部品説明 Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRFSL4510PbF Datasheet, IRFSL4510PbF PDF,ピン配置, 機能
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD - 97771
IRFS4510PbF
IRFSL4510PbF
HEXFET® Power MOSFET
D VDSS
100V
RDS(on) typ.
11.3mΩ
max. 13.9mΩ
S ID (Silicon Limited)
61A
D
D
DS
G
D2Pak
IRFS4510PbF
DS
G
TO-262
IRFSL4510PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
ePeak Diode Recovery
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
dSingle Pulse Avalanche Energy
IAR Avalanche Current
fEAR Repetitive Avalanche Energy
Thermal Resistance
Parameter
iRθJC Junction-to-Case
ijRθJA Junction-to-Ambient
Max.
61
43
250
140
0.95
± 20
3.2
-55 to + 175
300
x x10lb in (1.1N m)
130
See Fig. 14, 15, 22a, 22b,
Typ.
–––
–––
Max.
1.05
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
www.irf.com
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