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PDF IRFZ46ZPbF Data sheet ( Hoja de datos )
| Número de pieza | IRFZ46ZPbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 95562A
IRFZ46ZPbF
IRFZ46ZSPbF
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
Absolute Maximum Ratings
IRFZ46ZLPbF
HEXFET® Power MOSFET
D VDSS = 55V
G RDS(on) = 13.6mΩ
S ID = 51A
TO-220AB
IRFZ46ZPbF
D2Pak
TO-262
IRFZ46ZSPbF IRFZ46ZLPbF
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (tested)
IAR
EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Max.
51
36
200
82
0.54
± 20
63
97
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Parameter
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA Junction-to-Ambient
jRθJA Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
Typ.
–––
0.50
–––
–––
Max.
1.84
–––
62
40
Units
°C/W
www.irf.com
1
09/21/10
1 page  
55
50
45
40
35
30
25
20
15
10
5
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs.
Case Temperature
IRFZ46Z/S/LPbF
2.5
ID = 31A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
10
1 D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci i/Ri
R2R2
τ2 τ2
R3R3 Ri (°C/W) τi (sec)
τCτ 0.9322 0.000357
τ3τ3 0.5533 0.001133
0.3545 0.004091
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page 
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IRFZ46Z/S/LPbF
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL3103L
LOT CODE 1789
AS SEMBLED ON WW 19, 1997
IN T HE AS SEMBLY LINE "C"
INTERNAT IONAL
RECT IFIER
L OGO
ASS EMBLY
LOT CODE
PART NUMBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
OR
INT ERNATIONAL
RECT IFIER
LOGO
AS SEMBLY
LOT CODE
PART NUMBER
DAT E CODE
P = DE SIGNAT ES LE AD-FREE
PRODUCT (OPT IONAL)
YEAR 7 = 1997
WEEK 19
A = ASSE MBLY SIT E CODE
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IRFZ46ZPbF.PDF ] | |
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