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PDF IRF7422D2 Data sheet ( Hoja de datos )
| Número de pieza | IRF7422D2 | |
| Descripción | MOSFET & Schottky Diode | |
| Fabricantes | International Rectifier | |
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PD- 91412M
IRF7422D2
l Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l Ideal For Buck Regulator Applications
l P-Channel HEXFET
l Low VF Schottky Rectifier
l Generation 5 Technology
l SO-8 Footprint
Description
The FETKYTM family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative
board space saving solution for switching regulator
and power management applications. Generation 5
HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combinining this technology with International
Rectifier's low forward drop Schottky rectifiers results
in an extremely efficient device suitable for use in a
wide variety of portable electronics applications.
FETKY TM MOSFET & Schottky Diode
A1
A2
S3
AA
8D
7D
VDSS = -20V
6 D RDS(on) = 0.09Ω
G4
5D
Schottky Vf = 0.52V
Top View
SO-8
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current À
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Á
Junction and Storage Temperature Range
Thermal Resistance Ratings
Parameter
RθJA
Junction-to-Ambient Ã
Maximum
-4.3
-3.4
-33
2.0
1.3
16
± 12
-5.0
-55 to +150
Maximum
62.5
Units
A
W
mW/°C
V
V/ns
°C
Units
°C/W
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
ISD ≤ -2.2A, di/dt ≤ -50A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs – duty cycle ≤ 2%
Surface mounted on FR-4 board, t ≤ 10sec.
www.irf.com
1
10/18/04
1 page  
IRF7422D2
Power Mosfet Characteristics
100
0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
0.4
0.3
0.2
VGS = -2.5V
0.1
0.0
0
VGS = -5.0V
2
4
6
ID , Drain Current (A)
A
8
Fig 10. Typical On-Resistance Vs. Drain
Current
www.irf.com
0.14
0.12
0.10
I D = -4.3A
0.08
0.06
0.04
2
3 45 6
VGS , Gate-to-Source Voltage (V)
A
7
Fig 11. Typical On-Resistance Vs. Gate
Voltage
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7422D2.PDF ] | |
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