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IRF7704PbFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRF7704PbF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7704PbFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.1mm)
l Available in Tape & Reel
l Lead-Free
VDSS
-40V
PD- 96025A
IRF7704PbF
HEXFET® Power MOSFET
RDS(on) max (mW)
46@VGS = -10V
74@VGS = -4.5V
ID
-4.6A
-3.7A
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides thedesigner
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
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TSSOP-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-40
-4.6
-3.7
-19
1.5
1.0
12
± 20
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient
www.irf.com
Max.
83
Units
°C/W
1
05/15/09
1 Page 1000
100
VGS
TOP -15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
10
1
0.1
0.01
0.1
-2.70V
20µs PULSE WIDTH
TJ = 25 °C
1 10
-VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
IRF7704PbF
100
10
VGS
TOP -15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
1 -2.70V
0.1
0.1
20µs PULSE WIDTH
TJ= 150 °C
1 10
-VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100.0
10.0 TJ = 150°C
1.0
TJ = 25°C
0.1
0.0
2.5
VDS = -25V
20µs PULSE WIDTH
3.0 3.5 4.0 4.5
-VGS, Gate-to-Source Voltage (V)
5.0
Fig 3. Typical Transfer Characteristics
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2.0 ID = 4.6A
1.5
1.0
0.5
0.0 VGS= -10V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF7704PbF
0.08 0.070
0.060
0.06 VGS = -4.5V
0.050
0.040
0.04
ID = -4.6A
VGS = -10V
0.030
0.02
0.0
4.0 8.0 12.0
-VGS, Gate -to -Source Voltage (V)
16.0
Fig 11. Typical On-Resistance Vs. Gate
Voltage
0.020
0
4 8 12 16
-ID , Drain Current (A)
20
Fig 12. Typical On-Resistance Vs. Drain
Current
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
6 Page | |||
ページ | 合計 : 9 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRF7704PbF | Power MOSFET ( Transistor ) | International Rectifier |