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PDF IRF7809AVPbF Data sheet ( Hoja de datos )
| Número de pieza | IRF7809AVPbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current
applications
• 100% Tested for Rg
• Lead-Free
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7809AV has been optimized for all parameters
that are critical in synchronous buck converters including
TRhDSe(onI)R, gFa7t8e0c9hAaVrgeofafenrds
Cdv/dt-induced turn-on
particulary low RDS(on)
immunity.
and high
Cdv/dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical
PCB mount application.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (VGS ≥ 4.5V)
Pulsed Drain Current
TA = 25°C
TL = 90°C
Power Dissipation
TA = 25°C
TL = 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Symbol
VDS
VGS
ID
IDM
PD
TJ, TSTG
IS
ISM
RθJA
RθJL
PD - 95212A
IRF7809AVPbF
SO-8
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
DEVICE CHARACTERISTICS
RDS(on)
QG
Qsw
Qoss
IRF7809AV
7.0mΩ
41nC
14nC
30nC
IRF7809A V
30
±12
13.3
14.6
100
2.5
3.0
–55 to 150
2.5
50
Max.
50
20
Units
V
A
W
°C
A
Units
°C/W
°C/W
08/23/05
1 page  
IRF7809AVPbF
16
12
8
4
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7809AVPbF.PDF ] | |
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