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PDF C6050 Data sheet ( Hoja de datos )
| Número de pieza | C6050 | |
| Descripción | Silicon NPN epitaxial planar type | |
| Fabricantes | Panasonic | |
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Hay una vista previa y un enlace de descarga de C6050 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC6050
Silicon NPN epitaxial planar type
For high frequency amplification, oscillation and mixing
Features
High transition frequency fT
Small collector output capacitance (Common base, input open circuited) Cob
and reverse transfer capacitance (Common base) Crb
Optimum for high-density mounting and downsizing of the equipment for
Ultraminiature leadless package
0.6 mm × 1.0 mm (height 0.39 mm)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
VCBO
VCEO
Emitter-base voltage (Collector open)
VEBO
Collector current
Collector power dissipation
Junction temperature
Storage temperature
IC
PC
Tj
Tstg
Rating
15
10
3
50
100
125
−55 to +125
Unit
V
V
V
mA
mW
°C
°C
Unit: mm
32
1.00±0.05
1
0.39+−00..0031
0.25±0.05
0.25±0.05
1
32
0.65±0.01
0.05±0.03
1: Base
2: Emitter
3: Collector
Marking Symbol: 6N
ML3-N2 Package
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
VCEO
VEBO
ICBO
hFE
VCE(sat)
IC = 2 mA, IB = 0
IE = 10 µA, IC = 0
VCB = 10 V, IE = 0
VCE = 4 V, IC = 5 mA
IC = 20 mA, IB = 4 mA
10
3
1
75 400
0.5
Transition frequency
fT VCB = 4 V, IE = −5 mA, f = 200 MHz
1.4 1.9 2.7
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 4 V, IE = 0, f = 1 MHz
1.4
Reverse transfer capacitance (Common base)
Collector-base parameter
hFE ratio
Crb
rbb' cc
∆hFE
VCB = 4 V, IE = 0, f = 1 MHz
VCB = 4 V, IE = −5 mA, f = 31.9 MHz
VCE = 4 V, IC = 100 µA / VCE = 4 V, IC =
5 mA
0.75
0.45
11
1.6
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit
V
V
µA
V
GHz
pF
pF
ps
Publication date: May 2005
SJC00335AED
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet C6050.PDF ] | |
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