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HGT1S20N36G3VLS PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 HGT1S20N36G3VLS
部品説明 Voltage Clamping IGBTs
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 



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HGT1S20N36G3VLS Datasheet, HGT1S20N36G3VLS PDF,ピン配置, 機能
March 2004
HGTP20N36G3VL,HGT1S20N36G3VLS,
HGT1S20N36G3VL
20A, 360V N-Channel,
Logic Level, Voltage Clamping IGBTs
Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = 175oC
• Ignition Energy Capable
Description
This N-Channel IGBT is a MOS gated, logic level device which is
intended to be used as an ignition coil driver in automotive ignition
circuits. Unique features include an active voltage clamp between
the collector and the gate which provides Self Clamped Inductive
Switching (SCIS) capability in ignition circuits. Internal diodes pro-
vide ESD protection for the logic level gate. Both a series resistor
and a shunt resistor are provided in the gate circuit.
PACKAGING
PART NUMBER
PACKAGE
BRAND
HGTP20N36G3VL
TO-220AB
20N36GVL
HGT1S20N36G3VL
TO-262AA
20N36GVL
HGT1S20N36G3VLS
TO-263AB
20N36GVL
Packages
COLLECTOR
(FLANGE)
JEDEC TO-220AB
EC
G
JEDEC TO-263AB
G
E
JEDEC TO-262AA
ECG
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
Symbol
COLLECTOR
The development type number for this device is TA49296.
GATE
R1
R2
EMITTER
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Bkdn Voltage At 10mA, RGE = 1k. . . . . . . . . . . . . . . . . . . . . . . BVCER
Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS
Collector Current Continuous At VGE = 5.0V, TC = +25oC, Figure 7 . . . . . . . . . . . . . IC25
At VGE = 5.0V, TC = +100oC . . . . . . . . . . . . . . . . . . . .IC100
Gate-Emitter-Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Inductive Switching Current At L = 2.3mH, TC = +25o C . . . . . . . . . . . . . . . . . . . . . . ISCIS
At L = 2.3mH, TC = +150oC . . . . . . . . . . . . . . . . . . . . . . ISCIS
Collector to Emitter Avalanche Energy At L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . EAS
Power Dissipation Total At TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Electrostatic Voltage at 100pF, 1500. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
NOTE: May be exceeded if IGEM is limited to 10mA.
HGTP20N36G3VL
HGT1S20N36G3VL
HGT1S20N36G3VLS
395
28
37.7
26
±10
21
16
500
150
1.0
-40 to +175
260
6
UNITS
V
V
A
A
V
A
A
mJ
W
W/oC
oC
oC
KV
©2004 Fairchild Semiconductor Corporation
HGTP20N36G3VL, HGT1S20N36G3VL, HGT1S20N36G3VLS Rev. C1

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