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L2SC2412KRLT3G の電気的特性と機能

L2SC2412KRLT3GのメーカーはLeshan Radio Companyです、この部品の機能は「General Purpose Transistors」です。


製品の詳細 ( Datasheet PDF )

部品番号 L2SC2412KRLT3G
部品説明 General Purpose Transistors
メーカ Leshan Radio Company
ロゴ Leshan Radio Company ロゴ 




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L2SC2412KRLT3G Datasheet, L2SC2412KRLT3G PDF,ピン配置, 機能
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
Device
L2SC2412KQLT1G
S-L2SC2412KQLT1G
L2SC2412KQLT3G
S-L2SC2412KQLT3G
L2SC2412KRLT1G
S-L2SC2412KRLT1G
L2SC2412KRLT3G
S-L2SC2412KRLT3G
L2SC2412KSLT1G
S-L2SC2412KSLT1G
L2SC2412KSLT3G
S-L2SC2412KSLT3G
MAXIMUM RATINGS
Marking
BQ
BQ
BR
BR
G1F
G1F
Shipping
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
L2SC2412KQLT1G
Series
S-L2SC2412KQLT1G
Series
3
1
2
SOT– 23
Rating
Symbol Value
Unit
Collector–Emitter Voltage
V CEO
50
V
Collector–Base Voltage
V CBO
60
V
Emitter–Base Voltage
V EBO
7.0
V
Collector Current — Continuous
Collector power dissipation
Junction temperature
IC
PC
Tj
150 mAdc
0.2 W
150 °C
Storage temperature
T stg -55 ~+150 °C
DEVICE MARKING
L2SC2412KQLT1G =BQ L2SC2412KRLT1G =BR L2SC2412KSLT1G =G1F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Collector–Emitter Breakdown Voltage
(IC = 1 mA)
Emitter–Base Breakdown Voltage
(IE = 50 µA)
Collector–Base Breakdown Voltage
(IC = 50 µA)
Collector Cutoff Current
(VCB = 60 V)
Emitter cutoff current
(VEB = 7 V)
Collector-emitter saturation voltage
(IC/ IB = 50 mA / 5m A)
DC current transfer ratio
(V CE = 6 V, I C= 1mA)
Transition frequency
(V CE = 12 V, I E= – 2mA, f =30MHz )
Output capacitance
(V CB = 12 V, I E= 0A, f =1MHz )
Symbol
V (BR)CEO
V (BR)EBO
V (BR)CBO
I CBO
I EBO
V CE(sat)
h FE
fT
C ob
Min
50
7
60
120
1
BASE
Typ Max Unit
— —V
— —V
— —V
— 0.1 µA
— 0.1 µA
— 0.4 V
–– 560 ––
180 –– MHz
2.0 3.5 pF
3
COLLECTOR
2
EMITTER
h FE values are classified as follows:
*Q
R
hFE
120~270
180~390
S
270~560
Rev.O 1/4

1 Page





L2SC2412KRLT3G pdf, ピン配列
LESHAN RADIO COMPANY, LTD.
L2SC2412KQLT1G S-L2SC2412KQLT1G
Series
Series
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
0.5
0.2
Fig.8 Collector-emitter saturation voltage vs.
collector current ( )
0.5
0.2
0.1 0.1
0.05 0.05
0.02 0.02
0.01
0.2
0.5 1
2
5 10
20
50 100
I C, COLLECTOR CURRENT (mA)
200
0.01
0.2
0.5 1
2
5 10
20
I C, COLLECTOR CURRENT (mA)
50 100
Fig.9 Gain bandwidth product vs. emitter current Fig.10 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
20
500
10
200 5
100
50
–0.5
–1 –2
–5 –10 –20
I E, EMITTER CURRENT (mA)
–50 –100
Fig.11 Base-collector time constant vs.emitter current
2
1
0.2 0.5 1 2
5 10 20
50
V CB, COLLECTOR TO BASE VOLTAGE (V)
V EB, EMITTER TO BASE VOLTAGE (V)
200
100
50
20
10
–0.2
–0.5
–1
–2
I E, EMITTER CURRENT (mA)
–5
–10
Rev.O 3/4


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部品番号部品説明メーカ
L2SC2412KRLT3G

General Purpose Transistors

Leshan Radio Company
Leshan Radio Company


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