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L2SC2411KRLT3G PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 L2SC2411KRLT3G
部品説明 Medium Power Transistor
メーカ Leshan Radio Company
ロゴ Leshan Radio Company ロゴ 



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L2SC2411KRLT3G Datasheet, L2SC2411KRLT3G PDF,ピン配置, 機能
LESHAN RADIO COMPANY, LTD.
Medium Power Transistor
NPN silicon
FEATURE
ƽEpitaxial planar type
ƽComplementary to L2SA1036K
ƽWe declare that the material of product are Halogen Free and
compliance with RoHS requirements.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements,AEC-q101 qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
L2SC2411KQLT1G
S-L2SC2411KQLT1G
L2SC2411KQLT3G
S-L2SC2411KQLT3G
L2SC2411KRLT1G
S-L2SC2411KRLT1G
L2SC2411KRLT3G
S-L2SC2411KRLT3G
Marking
CQ
CQ
CR
CR
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
L2SC2411KQLT1G
Series
S-L2SC2411KQLT1G
Series
3
1
2
SOT– 23 (TO–236AB)
3
COLLECTOR
MAXIMUM RATINGS (TA = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
40
32
5
0.5
0.2
150
-55~+150
*PC must not be exceeded.
ELECTRICAL CHARACTERISTICS(TA= 25°C)
Parameter
Symbol
Min.
Typ
Collector-base breakdown voltage
BVCBO
40
-
Collector-emitter breakdown voltage
BVCEO
32
-
Emitter-base breakdown voltgae
BVEBO
5
-
Collector cutoff current
ICBO
-
-
Emitter cutoff current
IEBO
-
-
DC current transfer ratio
hFE 120 -
Collcetor-emitter saturation voltage
VCE(sat)
-
-
Transition frequency
fT - 250
Output capacitance
Cob - 6.0
hFE values are classified as follows:
Item Q R
hFE
120~270 180~390
Unit
V
V
V
A*
W
°C
°C
Max.
-
-
-
1
1
390
0.4
-
-
Unit
V
V
V
µA
µA
-
V
MHz
pF
1
BASE
2
EMITTER
Conditions
IC=100µA
IC=1mA
IE=100µA
VCB=20V
VEB=4V
VCE=3V ,IC =100mA
IC/IB=500mA/50mA
VCE=5V,IE=-20mA,f=100MHz
VCB=10V,IE=0A,f=1MHz
Rev.O 1/4

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L2SC2411KRLT3G

Medium Power Transistor

Leshan Radio Company
Leshan Radio Company

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