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L2SC2412KRLT1のメーカーはLeshan Radio Companyです、この部品の機能は「General Purpose Transistors NPN Silicon」です。 |
部品番号 | L2SC2412KRLT1 |
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部品説明 | General Purpose Transistors NPN Silicon | ||
メーカ | Leshan Radio Company | ||
ロゴ | |||
このページの下部にプレビューとL2SC2412KRLT1ダウンロード(pdfファイル)リンクがあります。 Total 3 pages
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
L2SC2412K*LT1
• Pb−Free Package is Available.
www.DataSheet4U.com
3
COLLECTOR
3
MAXIMUM RATINGS
1
BASE
2
EMITTER
1
2
SOT– 23
Rating
Symbol Value
Unit
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Collector power dissipation
PC
Junction temperature
Tj
50 V
60 V
7.0 V
150 mAdc
0.2 W
150 °C
Storage temperature
T stg -55 ~+150 °C
DEVICE MARKING
L2SC2412KQLT1 =BQ L2SC2412KRLT1 =BR L2SC2412KSLT1 =G1F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Collector–Emitter Breakdown Voltage
(IC = 1 mA)
Emitter–Base Breakdown Voltage
(IE = 50 µA)
Collector–Base Breakdown Voltage
(IC = 50 µA)
Collector Cutoff Current
(VCB = 60 V)
Emitter cutoff current
(VEB = 7 V)
Collector-emitter saturation voltage
(IC/ IB = 50 mA / 5m A)
DC current transfer ratio
(V CE = 6 V, I C= 1mA)
Transition frequency
(V CE = 12 V, I E= – 2mA, f =30MHz )
Output capacitance
(V CB = 12 V, I E= 0A, f =1MHz )
Symbol
V (BR)CEO
V (BR)EBO
V (BR)CBO
I CBO
I EBO
V CE(sat)
h FE
fT
C ob
Min
50
7
60
—
—
—
120
—
—
ORDERING INFORMATION
Device
Marking
Shipping
L2SC2412KQLT1 BQ 3000 Tape & Reel
L2SC2412KQLT1G BQ(Pb-Free) 3000 Tape & Reel
L2SC2412KRLT1 BR 3000 Tape & Reel
L2SC2412KRLT1G BR(Pb-Free) 3000 Tape & Reel
L2SC2412KSLT1 G1F 3000 Tape & Reel
L2SC2412KSLT1G G1F(Pb-Free) 3000 Tape & Reel
Typ Max Unit
— —V
— —V
— —V
— 0.1 µA
— 0.1 µA
— 0.4 V
–– 560 ––
180 –– MHz
2.0 3.5 pF
h FE values are classified as follows:
*Q
R
hFE
120~270
180~390
S
270~560
L2SC2412K*LT1-1/3
1 Page LESHAN RADIO COMPANY, LTD.
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
0.5
0.2
www.DataSheet4U.com
0.1
0.05
L2S2412K*LT1
Fig.8 Collector-emitter saturation voltage vs.
collector current ( )
0.5
0.2
0.1
0.05
0.02 0.02
0.01
0.2
0.5 1
2
5 10
20
50 100
I C, COLLECTOR CURRENT (mA)
200
0.01
0.2
0.5 1
2
5 10
20
I , COLLECTOR CURRENT (mA)
C
50 100
Fig.9 Gain bandwidth product vs. emitter current Fig.10 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
20
500
10
200 5
100
50
–0.5
–1 –2
–5 –10 –20
I E, EMITTER CURRENT (mA)
–50 –100
Fig.11 Base-collector time constant vs.emitter current
2
1
0.2 0.5 1 2
5 10 20
50
V , COLLECTOR TO BASE VOLTAGE (V)
CB
V EB, EMITTER TO BASE VOLTAGE (V)
200
100
50
20
10
–0.2
–0.5
–1
–2
I , EMITTER CURRENT (mA)
E
–5
–10
L2SC2412K*LT1-3/3
3Pages | |||
ページ | 合計 : 3 ページ | ||
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PDF ダウンロード | [ L2SC2412KRLT1 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
L2SC2412KRLT1 | General Purpose Transistors NPN Silicon | Leshan Radio Company |
L2SC2412KRLT1G | General Purpose Transistors NPN Silicon | Leshan Radio Company |
L2SC2412KRLT3G | General Purpose Transistors | Leshan Radio Company |