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PDF NP36P06SLG Data sheet ( Hoja de datos )
| Número de pieza | NP36P06SLG | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP36P06SLG
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The NP36P06SLG is P-channel MOS Field Effect
Transistor designed for high current switching applications.
FEATURES
• Super low on-state resistance
RDS(on)1 = 30 mΩ MAX. (VGS = −10 V, ID = −18 A)
RDS(on)2 = 40 mΩ MAX. (VGS = −4.5 V, ID = −18 A)
• Low input capacitance
Ciss = 3200 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP36P06SLG
TO-252 (MP-3ZK)
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
−60
m20
m36
m108
56
1.2
175
−55 to +175
23.4
54.8
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
2.68
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18008EJ5V0DS00 (5th edition)
Date Published November 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2006
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60
55
50
45
40
35
VGS = −4.5 V
30 −10 V
25
20
15
10 ID = −18 A
5 Pulsed
0
-100 -50 0 50 100 150 200
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
td(off)
tf
100
10 tr
td(on)
1
-0.1
VDD = −30 V, VGS = −10 V
RG = 0 Ω
-1 -10
ID - Drain Current - A
-100
-1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
-100
-10
-1
VGS = −10 V
0V
-0.1
-0.01
0
Pulsed
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
NP36P06SLG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
Coss
100
VGS = 0 V
f = 1 MHz
10
-0.1
-1
Crss
-10 -100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-60 -12
-50 VDD = −48 V
−30 V
-40 −12 V
-10
-8
-30 -6
VGS
-20 -4
-10
0
0
1000
VDS
20
-2
ID = −36 A
0
40 60
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
-0.1
di/dt = 100 A/μs
VGS = 0 V
-1 -10
IF - Diode Forward Current - A
-100
Data Sheet D18008EJ5V0DS
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NP36P06SLG.PDF ] | |
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