PDF IRF7811AVPbF Data sheet ( Hoja de datos )

Número de pieza	IRF7811AVPbF
Descripción	N-Channel Application-Specific MOSFETs
Fabricantes	International Rectifier
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No Preview Available ! IRF7811APVD-P95b26F5 IRF7811AVPbF • N-Channel Application-Specific MOSFETs • Ideal for CPU Core DC-DC Converters • Low Conduction Losses • Low Switching Losses • Minimizes Parallel MOSFETs for high current applications • 100% RG Tested • Lead-Free Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7811AV has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7811AV offers an extremely low combination of Qsw & RDS(on) for reduced losses in both control and synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. Absolute Maximum Ratings Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Output Current (VGS ≥ 4.5V) Pulsed Drain Current TA = 25°C TL = 90°C Power Dissipation eÃÃÃÃÃÃÃÃÃÃTA = 25°C TL = 90°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current SO-8 S1 S2 S3 G4 AA 8D 7D 6D 5D Top View DEVICE CHARACTERISTICS RDS(on) QG QSW QOSS IRF7811AV 11 mΩ 17 nC 6.7 nC 8.1 nC Symbol VDS VGS ID IDM PD TJ , TSTG IS ISM IRF7811AV 30 ±20 10.8 11.8 100 2.5 3.0 -55 to 150 2.5 50 Units V A W °C A Thermal Resistance Parameter ehMaximum Junction-to-Ambient hÃMaximum Junction-to-Lead www.irf.com Symbol RθJA RθJL Typ ––– ––– Max 50 20 Units °C/W 1 08/17/04 1 page IRF7811AVPbF SO-8 Package Outline Dimensions are shown in millimeters (inches) DB A5 6 E 8765 12 3 4 H 0.25 [.010] A 6X e e1 8X b A1 0.25 [.010] C A B A C 0.10 [.004] y INCHE S DIM MIN MAX A .0532 .0688 A1 .0040 .0098 b .013 .020 c .0075 .0098 D .189 .1968 E .1497 .1574 e .050 BASIC e 1 .025 BASIC H .2284 .2440 K .0099 .0196 L .016 .050 y 0° 8° MIL L IME T E R S MIN MAX 1.35 1.75 0.10 0.25 0.33 0.51 0.19 0.25 4.80 5.00 3.80 4.00 1.27 BASIC 0.635 BASIC 5.80 6.20 0.25 0.50 0.40 1.27 0° 8° K x 45° 8X L 8X c 7 NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) INT ERNAT IONAL RECT IFIER LOGO www.irf.com XXXX F 7101 F OOTPRINT 8X 0.72 [.028] 6.46 [.255] 3X 1.27 [.050] 8X 1.78 [.070] DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER 5 5 Page

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