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PDF UPA2735GR Data sheet ( Hoja de datos )
| Número de pieza | UPA2735GR | |
| Descripción | P-channel MOSFET | |
| Fabricantes | Renesas | |
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Data Sheet
μPA2735GR
P-channel MOSFET
–30 V, –16 A, 5.0 mΩ
R07DS0867EJ0100
Rev.1.00
Aug 28, 2012
Description
The μ PA2735GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
• VDSS = −30 V (TA = 25°C)
• Low on-state resistance
⎯ RDS(on) = 5.0 mΩ MAX. (VGS = −10 V, ID = −16 A)
• 4.5 V Gate-drive available
• Small and surface mount package (Power SOP8)
• Pb-free and Halogen free
Power SOP8
Ordering Information
Part No.
μ PA2735GR-E1-AT
μ PA2735GR-E2-AT
LEAD PLATING
Pure Sn
PACKING
Tape 2500 p/reel
Package
Power SOP8
0.08 g TYP.
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) ∗1
Total Power Dissipation ∗2
Total Power Dissipation (PW = 10 sec) ∗2
Channel Temperature
Storage Temperature
Single Avalanche Current ∗3
Single Avalanche Energy ∗3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
−30
m20
m16
m150
1.1
2.5
150
−55 to +150
16
25.6
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-A)
114
°C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
∗3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 μH
R07DS0867EJ0100 Rev.1.00
Aug 28, 2012
Page 1 of 6
1 page  
μPA2735GR
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-25
VDS VDD = –24 V
–15 V
-20 –6 V
-15
-10
-8
VGS
-6
-10 -4
-5 -2
ID = –16 A
-0 -0
0 50 100 150 200
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
VGS = –10 V
100
–4.5 V
10
0V
Pulsed
1
0 0.4 0.8 1.2
VF(S-D) - Source to Drain Voltage - V
R07DS0867EJ0100 Rev.1.00
Aug 28, 2012
Page 5 of 6
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UPA2735GR.PDF ] | |
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