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IRF8113GPbFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRF8113GPbF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF8113GPbFダウンロード(pdfファイル)リンクがあります。 Total 10 pages
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
l Lead-Free
l Halogen-Free
Benefits
l Very Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l 100% Tested for RG
PD - 96251
IRF8113GPbF
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max
Qg Typ.
:5.6m @VGS = 10V 24nC
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fRθJA Junction-to-Ambient
Max.
30
± 20
17.2
13.8
135
2.5
1.6
0.02
-55 to + 150
Typ.
–––
–––
Max.
20
50
Units
V
A
W
W/°C
°C
Units
°C/W
Notes through
are on page 10
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1
07/09/09
1 Page IRF8113GPbF
1000
100
VGS
TOP
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
1000
100
VGS
TOP
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
10
1
0.01
2.5V
20µs PULSE WIDTH
Tj = 25°C
0.1 1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
2.5V
10
1
0.01
20µs PULSE WIDTH
Tj = 150°C
0.1 1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 150°C
TJ = 25°C
10
1
2.5
VDS = 15V
20µs PULSE WIDTH
3.0 3.5
VGS, Gate-to-Source Voltage (V)
4.0
Fig 3. Typical Transfer Characteristics
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2.0
ID = 16.6A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF8113GPbF
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13. Gate Charge Test Circuit
6
200
ID
TOP 7.3A
160 8.2A
BOTTOM 13.3A
120
80
40
0
25
50 75 100 125
Starting TJ, Junction Temperature (°C)
150
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
LD
VDS
+
VDD -
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 14a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 14b. Switching Time Waveforms
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6 Page | |||
ページ | 合計 : 10 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRF8113GPbF | Power MOSFET ( Transistor ) | International Rectifier |