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IRF7807VD2PbFのメーカーはInternational Rectifierです、この部品の機能は「MOSFET / SCHOTTKY DIODE」です。 |
部品番号 | IRF7807VD2PbF |
| |
部品説明 | MOSFET / SCHOTTKY DIODE | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7807VD2PbFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
PD-95291
IRF7807VD2PbF
FETKY MOSFET / SCHOTTKY DIODE
• Co-Pack N-channel HEXFET® Power MOSFET
and Schottky Diode
• Ideal for Synchronous Rectifiers in DC-DC
A/S 1
8 K/D
Converters Up to 5A Output
• Low Conduction Losses
• Low Switching Losses
A/S 2
A/S 3
7 K/D
6 K/D
• Low Vf Schottky Rectifier
• Lead-Free
G4
5 K/D
D
Description
SO-8
Top View
The FETKY™ family of Co-Pack HEXFET®MOSFETs and
Schottky diodes offers the designer an innovative, board
space saving solution for switching regulator and power
management applications. HEXFET power MOSFETs
utilize advanced processing techniques to achieve
DEVICE CHARACTERISTICS
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The SO-
RDS(on)
Q
G
Qsw
Qoss
IRF7807VD2
17mΩ
9.5nC
3.4nC
12nC
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
25°C
Current (VGS ≥ 4.5V)
Pulsed Drain Current
70°C
Power Dissipation
25°C
70°C
Schottky and Body Diode
25°C
Average ForwardCurrent
70°C
Junction & Storage Temperature Range
Symbol
V
DS
VGS
ID
IDM
PD
IF (AV)
TJ, TSTG
Max.
30
±20
8.3
6.6
66
2.5
1.6
3.7
2.3
–55 to 150
Units
V
A
W
A
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
www.irf.com
RθJA
RθJL
Max.
50
20
Units
°C/W
°C/W
1
10/08/04
1 Page IRF7807VD2PbF
Power MOSFET Selection for DC/DC
Converters
Control FET
Special attention has been given to the power losses
in the switching elements of the circuit - Q1 and Q2.
Power losses in the high side switch Q1, also called
the Control FET, are impacted by the Rds(on) of the
MOSFET, but these conduction losses are only about
one half of the total losses.
Power losses in the control switch Q1 are given
by;
Ploss = P +conduction P +switching Pdrive+ Poutput
This can be expanded and approximated by;
( )Ploss =
I2
rms
×
Rds(on )
⎛
+⎜I
⎝
×
Qgd
ig
× Vin
×
f ⎞⎟
⎠
⎛
+⎜I
⎝
×
Qgs 2
ig
× Vin
×
f ⎞⎟
⎠
( )+ Qg × Vg × f
+
⎛
⎝
Qoss
2
× Vin
×
f
⎞
⎠
This simplified loss equation includes the terms Qgs2
and Qoss which are new to Power MOSFET data sheets.
Qgs2 is a sub element of traditional gate-source
charge that is included in all MOSFET data sheets.
The importance of splitting this gate-source charge
into two sub elements, Qgs1 and Qgs2, can be seen from
Fig 1.
Qgs2 indicates the charge that must be supplied by
the gate driver between the time that the threshold
voltage has been reached (t1) and the time the drain
current rises to Idmax (t2) at which time the drain volt-
age begins to change. Minimizing Qgs2 is a critical fac-
tor in reducing switching losses in Q1.
Qoss is the charge that must be supplied to the out-
put capacitance of the MOSFET during every switch-
ing cycle. Figure 2 shows how Qoss is formed by the
parallel combination of the voltage dependant (non-
linear) capacitance’s Cds and Cdg when multiplied by
the power supply input buss voltage.
www.irf.com
t1
VGTH
t0
4
Drain Current
t2 t3
1
Gate Voltage
2
Drain Voltage
Figure 1: Typical MOSFET switching waveform
Synchronous FET
The power loss equation for Q2 is approximated
by;
Ploss
=
Pconduction
+
Pdrive
+
P*
output
( )Ploss = Irms 2 × Rds(on)
( )+ Qg × Vg × f
( )+ ⎛⎜ Qoss
⎝2
× Vin
×
f⎞
⎠
+
Qrr × Vin × f
*dissipated primarily in Q1.
3
3Pages IRF7807VD2PbF
100
D = 0.50
10 0.20
0.10
0.05
0.02
1
0.01
0.1
0.00001
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
1
Figure 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
10
5 ID = 7.0A
4
VDS = 16V
3
2
1
0
0 2 4 6 8 10
QG , Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
12
6 www.irf.com
6 Page | |||
ページ | 合計 : 9 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRF7807VD2PbF | MOSFET / SCHOTTKY DIODE | International Rectifier |