IRFU540Z Datasheet PDF - International Rectifier
| Part Number | IRFU540Z | |
| Description | HEXFET Power MOSFET | |
| Manufacturers | International Rectifier | |
| Logo |  |
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There is a preview and IRFU540Z download ( pdf file ) link at the bottom of this page. Total 11 Pages | ||
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APPROVED
PD - TBD
AUTOMOTIVE MOSFET
Features
lAdvanced Process Technology
lUltra Low On-Resistance
l175°C Operating Temperature
lFast Switching
lRepetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
G
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÃIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Reflow Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
jRθJC
ijRθJA
jRθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
IRFR540Z
IRFU540Z
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 28.5mΩ
S ID = 35A
D-Pak
IRFR540Z
I-Pak
IRFU540Z
Max.
35
25
140
91
0.61
± 20
39
75
See Fig.12a, 12b, 15, 16
-55 to + 175
300
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
–––
–––
Max.
1.64
40
110
Units
°C/W
1
2/3/05
|
| |
 
IRFR/U540Z
40 2.5
ID = 21A
VGS = 10V
30 2.0
20 1.5
10 1.0
0
25
50 75 100 125 150
TC , CaseTemperature (°C)
175
Fig 9. Maximum Drain Current vs.
Case Temperature
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
10
1 D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
τJ τJ
τ1 τ1
R1R1
CiC= iτi/τRi/iRi
R2R2
τ2 τ2
R3R3 Ri (°C/W) τi (sec)
τCτ 2.626 0.000052
τ3τ3 0.6611 0.001297
0.7154 0.01832
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRFU540Z electronic component. |
| Information | Total 11 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRFU540Z.PDF Datasheet ] | |
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