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UPA2736GR の電気的特性と機能

UPA2736GRのメーカーはRenesasです、この部品の機能は「P-channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 UPA2736GR
部品説明 P-channel MOSFET
メーカ Renesas
ロゴ Renesas ロゴ 




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UPA2736GR Datasheet, UPA2736GR PDF,ピン配置, 機能
Data Sheet
μPA2736GR
P-channel MOSFET
–30 V, –14 A, 7.0 mΩ
R07DS0868EJ0100
Rev.1.00
Aug 28, 2012
Description
The μ PA2736GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
VDSS = 30 V (TA = 25°C)
Low on-state resistance
RDS(on) = 7.0 mΩ MAX. (VGS = 10 V, ID = 14 A)
4.5 V Gate-drive available
Small and surface mount package (Power SOP8)
Pb-free and Halogen free
Ordering Information
Power SOP8
Part No.
μ PA2736GR-E1-AT
μ PA2736GR-E2-AT
LEAD PLATING
Pure Sn
PACKING
Tape 2500 p/reel
Package
Power SOP8
0.08 g TYP.
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) 1
Total Power Dissipation 2
Total Power Dissipation (PW = 10 sec) 2
Channel Temperature
Storage Temperature
Single Avalanche Current 3
Single Avalanche Energy 3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
30
m20
m14
m140
1.1
2.5
150
55 to +150
14
19.6
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-A)
114
°C/W
Notes: 1. PW 10 μs, Duty Cycle 1%
2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH
R07DS0868EJ0100 Rev.1.00
Aug 28, 2012
Page 1 of 6

1 Page





UPA2736GR pdf, ピン配列
μPA2736GR
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-1000
-100
ID(pulse) = –140 A
ID(DC) = –14 A
-10
100 ms
30 ms
PW
= 100
10 ms s
-1
-0.1
-0.01
Single Pulse
TA = 25°C
Power
Dissipation
DC
Limited
Mounted on glass epoxy board of
25.4 mm x 25.4 mm x 0.8 mmt
-0.01
-0.1
-1
-10
-100
VDS - Drain to Source Voltage – V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 114°C/W
10
1
0.1 Rth(ch-A)Mounted on glass epoxy board of
25.4 mm x 25.4 mm x 0.8 mmt
Single pulse
0.01
100 μ
1m
10 m
100 m
1
PW - Pulse Width - s
10
100 1000
-150
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = –10 V
-100
-50 –4.5 V
Pulsed
-0
-0 -0.5 -1 -1.5
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
-100
-10 TA = 150°C
75°C
-1
25°C
–55°C
-0.1
-0.01
Pulsed
VDS = –10 V
-0.001
-0 -1 -2 -3 -4
VGS - Gate to Source Voltage - V
R07DS0868EJ0100 Rev.1.00
Aug 28, 2012
Page 3 of 6


3Pages


UPA2736GR 電子部品, 半導体
μPA2736GR
Package Drawings (Unit: mm)
Power SOP8
8
5
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8 : Drain
14
5.37 MAX.
6.0 ±0.3
4.4
0.8
Equivalent Circuit
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
Gate
Drain
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0868EJ0100 Rev.1.00
Aug 28, 2012
Page 6 of 6

6 Page



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部品番号部品説明メーカ
UPA2736GR

P-channel MOSFET

Renesas
Renesas


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