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UPA2736GRのメーカーはRenesasです、この部品の機能は「P-channel MOSFET」です。 |
部品番号 | UPA2736GR |
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部品説明 | P-channel MOSFET | ||
メーカ | Renesas | ||
ロゴ | |||
このページの下部にプレビューとUPA2736GRダウンロード(pdfファイル)リンクがあります。 Total 8 pages
Data Sheet
μPA2736GR
P-channel MOSFET
–30 V, –14 A, 7.0 mΩ
R07DS0868EJ0100
Rev.1.00
Aug 28, 2012
Description
The μ PA2736GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
• VDSS = −30 V (TA = 25°C)
• Low on-state resistance
⎯ RDS(on) = 7.0 mΩ MAX. (VGS = −10 V, ID = −14 A)
• 4.5 V Gate-drive available
• Small and surface mount package (Power SOP8)
• Pb-free and Halogen free
Ordering Information
Power SOP8
Part No.
μ PA2736GR-E1-AT
μ PA2736GR-E2-AT
LEAD PLATING
Pure Sn
PACKING
Tape 2500 p/reel
Package
Power SOP8
0.08 g TYP.
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) ∗1
Total Power Dissipation ∗2
Total Power Dissipation (PW = 10 sec) ∗2
Channel Temperature
Storage Temperature
Single Avalanche Current ∗3
Single Avalanche Energy ∗3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
−30
m20
m14
m140
1.1
2.5
150
−55 to +150
14
19.6
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-A)
114
°C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
∗3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 μH
R07DS0868EJ0100 Rev.1.00
Aug 28, 2012
Page 1 of 6
1 Page μPA2736GR
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-1000
-100
ID(pulse) = –140 A
ID(DC) = –14 A
-10
100 ms
30 ms
PW
= 100
10 ms s
-1
-0.1
-0.01
Single Pulse
TA = 25°C
Power
Dissipation
DC
Limited
Mounted on glass epoxy board of
25.4 mm x 25.4 mm x 0.8 mmt
-0.01
-0.1
-1
-10
-100
VDS - Drain to Source Voltage – V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 114°C/W
10
1
0.1 Rth(ch-A):Mounted on glass epoxy board of
25.4 mm x 25.4 mm x 0.8 mmt
Single pulse
0.01
100 μ
1m
10 m
100 m
1
PW - Pulse Width - s
10
100 1000
-150
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = –10 V
-100
-50 –4.5 V
Pulsed
-0
-0 -0.5 -1 -1.5
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
-100
-10 TA = 150°C
75°C
-1
25°C
–55°C
-0.1
-0.01
Pulsed
VDS = –10 V
-0.001
-0 -1 -2 -3 -4
VGS - Gate to Source Voltage - V
R07DS0868EJ0100 Rev.1.00
Aug 28, 2012
Page 3 of 6
3Pages μPA2736GR
Package Drawings (Unit: mm)
Power SOP8
8
5
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8 : Drain
14
5.37 MAX.
6.0 ±0.3
4.4
0.8
Equivalent Circuit
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
Gate
Drain
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0868EJ0100 Rev.1.00
Aug 28, 2012
Page 6 of 6
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ UPA2736GR データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
UPA2736GR | P-channel MOSFET | Renesas |