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PDF IRLL024ZPbF Data sheet ( Hoja de datos )
| Número de pieza | IRLL024ZPbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 150°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
G
PD - 95990A
IRLL024ZPbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 60mΩ
S ID = 5.0A
SOT-223
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
iContinuous Drain Current, VGS @ 10V (Silicon Limited)
iContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
iPower Dissipation
jPower Dissipation
iLinear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÃIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
iRθJA Junction-to-Ambient (PCB mount, steady state)
jRθJA Junction-to-Ambient (PCB mount, steady state)
www.irf.com
Max.
5.0
4.0
40
2.8
1.0
0.02
± 16
21
38
See Fig.12a, 12b, 15, 16
-55 to + 150
Typ.
–––
–––
Max.
45
120
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
09/27/10
1 page  
IRLL024ZPbF
5
4
3
2
1
0
25
50 75 100 125
TA , Ambient Temperature (°C)
Fig 9. Maximum Drain Current vs.
Ambient Temperature
150
2.0
ID = 3.0A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci i/Ri
R2R2
τ2 τ2
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
R3R3 Ri (°C/W) τi (sec)
τCτ 5.3396 0.000805
τ3τ3 19.881 0.706300
19.771 20.80000
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1 10 100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
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| PDF Descargar | [ Datasheet IRLL024ZPbF.PDF ] | |
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