|
|
PDF IRF7353D2PbF Data sheet ( Hoja de datos )
| Número de pieza | IRF7353D2PbF | |
| Descripción | FETKY MOSFET / Schottky Diode | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRF7353D2PbF (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
PD- 95215A
IRF7353D2PbF
l Co-Pack HEXFET® Power MOSFET and
Schottky Diode
l Ideal For Buck Regulator Applications A
l N-Channel HEXFET power MOSFET
l Low VF Schottky Rectifier
l Generation 5 Technology
A
S
l SO-8 Footprint
G
l Lead-Free
FETKYä MOSFET / Schottky Diode
18
27
36
45
Top View
K VDSS = 30V
K
D RDS(on) = 0.029Ω
D Schottky VF = 0.52V
Description
The FETKY™ family of Co-Pack HEXFET® Power MOSFETs and Schottky
diodes offers the designer an innovative, board space saving solution for
switching regulator and power management applications. Generation 5
HEXFET power MOSFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combinining this
technology with International Rectifier's low forward drop Schottky rectifiers
results in an extremely efficient device suitable for use in a wide variety of
portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
SO-8
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
Maximum
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current Ã
Pulsed Drain Current À
Power Dissipation Ã
Linear Derating Factor
6.5
5.2
52
2.0
1.3
16
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Á
± 20
-5.0
TJ, TSTG
Junction and Storage Temperature Range
-55 to +150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Junction-to-Ambient
Maximum
62.5
Notes:
À Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
Á Starting TJ = 25°C, L = 10mH, RG = 25Ω, IAS = 4.0A
 ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
à Pulse width ≤ 300µs; duty cycle ≤ 2%
Surface mounted on FR-4 board, t ≤ 10sec.
www.irf.com
Units
°C/W
1
10/8/04
1 page  
Power MOSFET Characteristics
IRF7353D2PbF
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.0001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
100
www.irf.com
TJ = 150°C
10
TJ = 25°C
1 VGS = 0V A
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode
Forward Voltage
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7353D2PbF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRF7353D2PbF | FETKY MOSFET / Schottky Diode | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |