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FDS4410AのメーカーはFairchild Semiconductorです、この部品の機能は「Single N-Channel PowerTrench MOSFET」です。 |
部品番号 | FDS4410A |
| |
部品説明 | Single N-Channel PowerTrench MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDS4410Aダウンロード(pdfファイル)リンクがあります。 Total 5 pages
May 2005
FDS4410A
Single N-Channel, Logic-Level, PowerTrench® MOSFET
Features
■ 10 A, 30 V. RDS(ON) = 13.5 mΩ @ VGS = 10 V
RDS(ON) = 20 mΩ @ VGS = 4.5 V
■ Fast switching speed
■ Low gate charge
■ High performance trench technology for extremely low
RDS(ON)
■ High power and current handling capability
General Description
This N-Channel Logic Level MOSFET is produced using Fair-
child Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
D
D
D
D
SO-8
Pin 1
G
S
S
S
54
63
72
81
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain–Source Voltage
Gate–Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 1)
Ratings
30
±20
10
50
2.5
1.0
–55 to +150
50
125
25
Package Marking and Ordering Information
Device Marking
FDS4410A
Device
FDS4410A
Reel Size
13"
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
FDS4410A Rev. B
1
www.fairchildsemi.com
1 Page Typical Characteristics
50
VGS = 10V
4.0V
40
6.0V
4.5V
3.5.V
30
20
10 3.0V
0
0 0.5 1 1.5 2
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.8
ID = 10A
1.6 VGS = 10V
1.4
1.2
1
0.8
0.6
-50 -25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation with
Temperature.
50
VDS = 5V
40
30
20
10
0
1
TA = 125oC
25oC
-55oC
1.5 2 2.5 3 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
3
VGS = 3.0V
2.5
2
3.5V
1.5
4.0V
4.5V
6.0V
1 10V
0.5
0
10 20 30 40
ID, DRAIN CURRENT (A)
50
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.05
0.04
ID = 5 A
0.03
0.02
TA = 25oC
0.01
TA = 125oC
0
2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
TA = 125oC
25oC
0.01
0.001
-55oC
0.0001
0
0.2 0.4 0.6 0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4410A Rev. B
3 www.fairchildsemi.com
3Pages | |||
ページ | 合計 : 5 ページ | ||
|
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FDS4410A | Single N-Channel PowerTrench MOSFET | Fairchild Semiconductor |