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IRLR024ZPbF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRLR024ZPbF
部品説明 Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRLR024ZPbF Datasheet, IRLR024ZPbF PDF,ピン配置, 機能
Features
n Logic Level
n Advanced Process Technology
n Ultra Low On-Resistance
n 175°C Operating Temperature
n Fast Switching
n Repetitive Avalanche Allowed up to Tjmax
n Lead-Free
G
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in a wide variety of applications.
PD - 95773B
IRLR024ZPbF
IRLU024ZPbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 58m
S ID = 16A
D-Pak
I-Pak
IRLR024ZPbF IRLU024ZPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case ˆ
iJunction-to-Ambient (PCB mount)
Junction-to-Ambient
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
Max.
16
11
64
35
0.23
± 16
25
25
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
4.28
40
110
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
10/01/10

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IRLR024ZPbF

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