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UPA2520のメーカーはRenesasです、この部品の機能は「MOS FIELD EFFECT TRANSISTOR」です。 |
部品番号 | UPA2520 |
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部品説明 | MOS FIELD EFFECT TRANSISTOR | ||
メーカ | Renesas | ||
ロゴ | |||
このページの下部にプレビューとUPA2520ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2520
N-CHANNEL MOS FET
FOR SWITCHING
DESCRIPTION
The μ PA2520 is N-channel MOS Field Effect Transistor
designed for DC/DC converter and power management
applications of portable equipments.
PACKAGE DRAWING (Unit: mm)
2.9±0.1
0.65
8
5
A
0.17±0.05
FEATURES
• Low on-state resistance
RDS(on)1 = 13.2 mΩ MAX. (VGS = 10 V, ID = 10 A)
RDS(on)2 = 17 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A)
• Built-in gate protection diode
• Small and surface mount package (8-pin VSOF (2429))
• Pb-free (This product does not contain Pb in external electrode
and other parts.)
0 to 0.025
1
0.32±0.05
4
0.05 M S A
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8: Drain
S
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
Total Power Dissipation (PW = 5 sec) Note2
ID(DC)
ID(pulse)
PT1
PT2
±10
±40
1.0
2.2
A
A
W
W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg −55 to +150 °C
IAS 10 A
EAS 10 mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G19186EJ1V0DS00 (1st edition)
Date Published March 2008 NS
Printed in Japan
2008
1 Page μ PA2520
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
10
1
0.1
ID(pulse)
ID(DC)
RD(SV(onG)SL=im1ii0teVd )
PW
Po
wer
1i 0
1i 00
5i s
msi
Dissip at io n
1i msi
msi
Limited
= 1i00
μs
0.01
Single Pulse
Mounted on FR-4 board of
25.4 mm x 25.4 mm x 0.8 mmt
0.01
0.1
1
10
100
VDS - Drain to Source Voltage - V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 125°C/Wi
10
1
Single Pulse
Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt
0.1
100 μ
1m
10 m
100 m
1
10 100 1000
PW - Pulse Width - s
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
40
10 V
4.5 V
30
4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
20
10 VGS = 3.0 V
Pulsed
0
0 0.2 0.4 0.6 0.8 1
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
30
VDS = 10 V
Pulsed
20
10
0
0
TA = 125°C
75°C
25°C
−25°C
123
VGS - Gate to Source Voltage - V
4
Data Sheet G19186EJ1V0DS
3
3Pages | |||
ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ UPA2520 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
UPA2520 | MOS FIELD EFFECT TRANSISTOR | Renesas |
UPA2521 | MOS FIELD EFFECT TRANSISTOR | Renesas |