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PDF IRF8721GPbF Data sheet ( Hoja de datos )
| Número de pieza | IRF8721GPbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 96262
IRF8721GPbF
Applications
l Control MOSFET of Sync-Buck
Converters used for Notebook Processor
Power
l Control MOSFET for Isolated DC-DC
Converters in Networking Systems
HEXFET® Power MOSFET
VDSS RDS(on) max
Qg
:30V 8.5m @VGS = 10V 8.3nC
Benefits
l Very Low Gate Charge
S1
AA
8D
l Low RDS(on) at 4.5V VGS
l Low Gate Impedance
S2
S3
7D
6D
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l Lead-Free
G4
5D
Top View
SO-8
l Halogen-Free
Description
The IRF8721GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package The IRF8721GPbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for Notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
± 20
14
11
110
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fRθJA Junction-to-Ambient
Notes through
are on page 9
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
07/10/09
1 page  
IRF8721GPbF
16
12
8
4
0
25
50 75 100 125
TA, Ambient Temperature (°C)
150
2.4
2.2
2.0
1.8 ID = 25µA
1.6
1.4
1.2
1.0
0.8
-75 -50 -25 0
25 50 75 100 125 150
TJ, Temperature ( °C )
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Threshold Voltage Vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1
0.02
0.01
0.1
0.01
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
τJ
τJ
τ1
τ1
R1R1
CiC=iτi/Ri/iRi
R2R2
τ2
τ2
R3R3
R4R4
τa
Ri (°C/W)
1.935595
τι (sec)
0.000148
τ3 τ3
τ4
τ4
7.021545 0.019345
26.61013 0.81305
14.43961 26.2
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01 0.1
1
10 100
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF8721GPbF.PDF ] | |
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