|
|
IXGT30N120B3D1のメーカーはIXYS Corporationです、この部品の機能は「GenX3 1200V IGBTs」です。 |
部品番号 | IXGT30N120B3D1 |
| |
部品説明 | GenX3 1200V IGBTs | ||
メーカ | IXYS Corporation | ||
ロゴ | |||
このページの下部にプレビューとIXGT30N120B3D1ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
GenX3TM 1200V IGBT
High speed Low Vsat PT
IGBTs 3-20 kHz switching
IXGH30N120B3D1
IXGT30N120B3D1
VCES
IC110
VCE(sat)
tfi(typ)
= 1200V
= 30A
≤£ 3.5V
= 204ns
Symbol
VCES
VCGR
VGES
VGEM
IC110
IF110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
Md
TL
TSOLD
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 5Ω
Clamped inductive load
TC = 25°C
Mounting torque (TO-247)
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
TO-247
TO-268
Maximum Ratings
1200
1200
V
V
±20
±30
30
28
150
ICM = 60
@ 0.8 • VCE
300
V
V
A
A
A
A
W
-55 ... +150
150
-55 ... +150
1.13 / 10
300
260
6
4
°C
°C
°C
Nm/lb.in.
°C
°C
g
g
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
Characteristic Values
(TJ
=
25°C, unless
Min.
otherwise specified)
Typ. Max.
IC = 250μA, VCE = VGE
VCE = VCES
VGE = 0V
TJ = 125°C
VCE = 0V, VGE = ±20V
IC
=
30A,
VGE
=
15V,
Note
1
TJ
=
125°C
3.0 5.0 V
300 μA
1.5 mA
±100 nA
2.96
2.95
3.5 V
V
TO-247 AD (IXGH)
G
CE
TO-268 (IXGT)
C (TAB)
GE
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z Optimized for low conduction and
switching losses
z Square RBSOA
z Anti-parallel ultra fast diode
z International standard packages
Advantages
z High power density
z Low gate drive requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Welding Machines
© 2008 IXYS CORPORATION, All rights reserved
DS99566A(05/08)
1 Page Fig. 1. Output Characteristics
@ 25ºC
60
55
VGE = 15V
13V
50 11V
45
40
35 9V
30
25
20 7V
15
10
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCE - Volts
Fig. 3. Output Characteristics
@ 125ºC
60
55
VGE = 15V
13V
50 11V
45
40
35 9V
30
25
20
15 7V
10
5 5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCE - Volts
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
6
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
TJ = 25ºC
I C = 60A
30A
15A
78
9 10 11 12 13 14 15
VGE - Volts
© 2008 IXYS CORPORATION, All rights reserved
IXGH30N120B3D1
IXGT30N120B3D1
200
180
160
140
120
100
80
60
40
20
0
0
Fig. 2. Extended Output Characteristics
@ 25ºC
VGE = 15V
13V
11V
9V
7V
3 6 9 12 15 18 21 24 27 30
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
1.5
1.4 VGE = 15V
1.3
I C = 60A
1.2
1.1 I C = 30A
1.0
0.9
0.8
I C = 15A
0.7
0.6
-50
-25
0 25 50 75 100
TJ - Degrees Centigrade
125
150
Fig. 6. Input Admittance
65
60
55
50
45
40
35
30
25
TJ = 125ºC
25ºC
20 - 40ºC
15
10
5
0
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
VGE - Volts
3Pages Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
180 50
160 t r
td(on) - - - -
140 TJ = 125ºC, VGE = 15V
VCE = 960V
I C = 60A
120
46
42
38
100 34
80 30
60 26
40 22
I C = 30A
20 18
0 14
5 7 9 11 13 15 17 19 21 23 25
RG - Ohms
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
130
120 t r
td(on) - - - -
110
100
RG = 5Ω , VGE = 15V
VCE = 960V
90 I C = 60A
80
26
25
24
23
22
21
70 20
60 19
50 18
40 17
30 I C = 30A
20
16
15
10 14
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
IXGH30N120B3D1
IXGT30N120B3D1
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
110
100 t r
td(on) - - - -
90 RG = 5Ω , VGE = 15V
80 VCE = 960V
70 TJ = 125ºC, 25ºC
60
50
40
30
20
10
0
15 20 25 30 35 40 45 50 55
IC - Amperes
30
28
26
24
22
20
18
16
14
12
10
8
60
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_30N120B3(4A)5-06-08-A
6 Page | |||
ページ | 合計 : 7 ページ | ||
|
PDF ダウンロード | [ IXGT30N120B3D1 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IXGT30N120B3D1 | GenX3 1200V IGBTs | IXYS Corporation |