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PDF AF15N50 Data sheet ( Hoja de datos )
| Número de pieza | AF15N50 | |
| Descripción | 50V N-Channel MOSFET | |
| Fabricantes | BCD | |
| Logotipo |  |
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Data Sheet
50V N-Channel MOSFET
AF15N50
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency and to
minimize switch node ringing of DC-DC converters
using either synchronous or conventional switching
PWM controllers. It has been optimized for low gate
charge, low RDS(ON), fast switching speed and body
diode reverse recovery performance.
The AF15N50 is available in PDFN-5×6-8 package.
Features
• Typ RDS(ON)=14.32m @ VGS=10V, ID=15A
• Typ RDS(ON)=16.36m @ VGS=4.5V, ID=15A
• RoHS Compliant
Applications
• Primary Switch in Isolated DC-DC
• Synchronous Rectifier
• Load Switch
Option 1
PDFN-5×6-8
Option 2
Figure 1. Package Type of AF15N50
Aug. 2013 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
1
1 page  
50V N-Channel MOSFET
Electrical Characteristics (Continued)
TC=25°C, unless otherwise specified.
Dynamic Characteristics
Parameters
Input Capacitance
Output Capacitance
Reverse
Transfer
Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Gate to Source Charge
Gate to Drain Charge
(Miller Charger)
Total Gate Charge
Gate Resistance
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qgs
Qgd
Qg
Rg
Conditions
VGS=0V, VDS=18V,
f=1MHz
VGS=0V, VDS=25V,
f=1MHz
VGS=0V, VDS=18V,
f=1MHz
VGS=0V, VDS=25V,
f=1MHz
VGS=0V, VDS=18V,
f=1MHz
VGS=0V, VDS=25V,
f=1MHz
VGS=10V, ID=15A,
VDD=25V, RG=6
VGS=0V to 10V,
VDD=25V, ID=15A
Data Sheet
AF15N50
Min Typ Max
1350
1316
110
97
95
85
4.162
14.85
35.452
31.108
3.2
5.7
15.2
0.85
Unit
pF
pF
pF
ns
nC
Aug. 2013 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet AF15N50.PDF ] | |
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