UPA622TT Datasheet PDF - Renesas
| Part Number | UPA622TT | |
| Description | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
| Manufacturers | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA622TT
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA622TT is a switching device which can be driven
directly by a 4.0 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
• 4.0 V drive available
• Low on-state resistance
RDS(on)1 = 82 mΩ MAX. (VGS = 10 V, ID = 1.5 A)
RDS(on)2 = 120 mΩ MAX. (VGS = 4.5 V, ID = 1.0 A)
RDS(on)3 = 139 mΩ MAX. (VGS = 4.0 V, ID = 1.0 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA622TT-E1-A
6 pin WSOF (1620)
µPA622TT-E2-A
Remark "-A" indicates Pb-free (This product does not contain Pb
in external electrode and other parts.).
"-E1" or "-E2" indicates the unit orientation.
(8 mm embossed carrier tape, 3000 pcs/reel)
PACKAGE DRAWING (Unit: mm)
2.0 ±0.2
6 54
1 23
0 to 0.05
0.65
0.65
0.8 MAX.
S
0.05 S
1, 2, 5, 6: Drain
3 : Gate
4 : Source
Marking: WC
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) Note1
Drain Current (pulse) Note2
VGSS
ID(DC)
ID(pulse)
±20
±3.0
±12
Total Power Dissipation
Total Power Dissipation Note1
PT1 0.2
PT2 1.3
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
Notes 1. Mounted on FR-4 board of 5000 mm2 x 1.1 mm, t ≤ 5 sec.
2. PW ≤ 10 µs, Duty Cycle ≤ 1%
V
V
A
A
W
W
°C
°C
0.2
+0.1
−0.05
0.1 M S
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16113EJ2V0DS00 (2nd edition)
Date Published May 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
2002
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
200
VGS = 10 V
Pulsed
150
TA = 125°C
100 75°C
25°C
−25°C
50
0
0.01
0.1 1 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
200
VGS = 4.0 V
Pulsed
150 TA = 125°C
75°C
25°C
100 −25°C
50
0
0.01
0.1 1 10
ID - Drain Current - A
100
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
VGS = 0 V
f = 1.0 M H z
100
C iss
C oss
C rss
10
0 .1
1 10
VDS - Drain to Source Voltage - V
100
µPA622TT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
200
VGS = 4.5 V
Pulsed
150
TA = 125°C
75°C
100 25°C
−25°C
50
0
0.01
0.1 1 10
ID - Drain Current - A
100
SWITCHING CHARACTERISTICS
1000
VDD = 15 V
VGS = 10 V
RG = 10 Ω
100
td (o ff)
tf
tr
1 0 td(on)
1
0 .1
1
ID - Drain Current - A
10
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
P u ls e d
10
VGS = 0 V
1
0.1
0.01
0.4
0.6 0.8 1 1.2
VF(S-D) - Source to Drain Voltage - V
1.4
Data Sheet G16113EJ2V0DS
5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for UPA622TT electronic component. |
| Information | Total 7 Pages | |
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| Download | [ UPA622TT.PDF Datasheet ] | |
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