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UPA621TTのメーカーはNECです、この部品の機能は「N-CHANNEL MOS FIELD EFFECT TRANSISTOR」です。 |
部品番号 | UPA621TT |
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部品説明 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | ||
メーカ | NEC | ||
ロゴ | |||
このページの下部にプレビューとUPA621TTダウンロード(pdfファイル)リンクがあります。 Total 8 pages
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA621TT
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA621TT is a switching device, which can be driven directly by a
2.5 V power source.
This device features a low on-state resistance and excellent switching
characteristics, and is suitable for applications such as power switch of
portable machine and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 50 mΩ MAX. (VGS = 4.5 V, ID = 2.5 A)
RDS(on)2 = 53 mΩ MAX. (VGS = 4.0 V, ID = 2.5 A)
RDS(on)3 = 79 mΩ MAX. (VGS = 2.5 V, ID = 2.5 A)
PACKAGE DRAWING (Unit: mm)
2.0 ±0.2
6 54
1 23
0~0.05
0.65 0.65
S
MAX. 0.8
ORDERING INFORMATION
PART NUMBER
µPA621TT
Marking: WB
PACKAGE
6pinWSOF (1620)
0.05 S
1,2,5,6 : Drain
3 : Gate
4 : Source
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
Gate to Source Voltage (VDS = 0 V)
VGSS
±12
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±5.0
±20
Total Power Dissipation
Total Power Dissipation Note2
PT1 0.2
PT2 1.4
Channel Temperature
Tch 150
Storage Temperature
Tstg −55 to +150
V
V
A
A
W
W
°C
°C
0.2
+0.1
−0.05
0.1 M S
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board, t ≤ 5 sec.
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G16112EJ1V0DS00 (1st edition)
Date Published June 2002 NS CP(K)
Printed in Japan
©
2002
1 Page µPA621TT
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
RDS(on) Limited
(VGS = 4.5 V) ID(pulse)
10
PW = 100 µs
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
25 50 75 100 125 150 175
TA - Ambient Temperature - °C
ID(DC)
1
1 ms
0.1
0.01
100 ms
Single Pulse
Mounted on FR-4 board of
50 cm2 x 1.1 mm
0.1 1
10
10 ms
5s
100
VDS - Drain to Source Voltage - V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
1
1m
10 m
Single Pulse
Mounted on FR-4 board of
50 cm2 x 1.1 mm
100 m
1
10 100 1000
PW - Pulse Width - s
Data Sheet G16112EJ1V0DS
3
3Pages DYNAMIC INPUT/OUTPUT CHARACTERISTICS
8
ID = 5.0 A
6 VDD = 16 V
10 V
4V
4
2
0
01234
QG - Gate Charge - nC
µPA621TT
6
Data Sheet G16112EJ1V0DS
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ UPA621TT データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
UPA621TT | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | NEC |